Characterization of ultrathin InSb nanocrystals film deposited on SiO2/Si substrate View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2011-11-23

AUTHORS

Dengyue Li, Hongtao Li, Hehui Sun, Liancheng Zhao

ABSTRACT

Recently, solid-phase recrystallization of ultrathin indium antimonide nanocrystals (InSb NCs (films grown on SiO2/Si substrate is very attractive, because of the rapid development of thermal annealing technique. In this study, the recrystallization behavior of 35 nm indium antimonide film was studied. Through X-ray diffraction (XRD) analysis, it is demonstrated that the InSb film is composed of nanocrystals after high temperature rapid thermal annealing. Scanning electron microscopy shows that the film has a smooth surface and is composed of tightly packed spherical grains, the average grain size is about 12.3 nm according to XRD results. The optical bandgap of the InSb NCs film analyzed by Fourier Transform infrared spectroscopy measurement is around 0.26 eV. According to the current-voltage characteristics of the InSb NCs/SiO2/p-Si heterojunction, the film has the rectifying behavior and the turn-on voltage value is near 1 V. More... »

PAGES

601-601

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/1556-276x-6-601

DOI

http://dx.doi.org/10.1186/1556-276x-6-601

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1004269556

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/22112251


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