High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2011-12

AUTHORS

Shulong Lu, Lian Ji, Wei He, Pan Dai, Hui Yang, Masayuki Arimochi, Hiroshi Yoshida, Shiro Uchida, Masao Ikeda

ABSTRACT

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell. More... »

PAGES

576

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/1556-276x-6-576

DOI

http://dx.doi.org/10.1186/1556-276x-6-576

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1038184650

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/22040124


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