Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111) View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2011-12

AUTHORS

Morten Hannibal Madsen, Martin Aagesen, Peter Krogstrup, Claus Sørensen, Jesper Nygård

ABSTRACT

The growth of self-assisted InAs nanowires (NWs) by molecular beam epitaxy (MBE) on Si(111) is studied for different growth parameters and substrate preparations. The thickness of the oxide layer present on the Si(111) surface is observed to play a dominant role. Systematic use of different pre-treatment methods provides information on the influence of the oxide on the NW morphology and growth rates, which can be used for optimizing the growth conditions. We show that it is possible to obtain 100% growth of vertical NWs and no parasitic bulk structures between the NWs by optimizing the oxide thickness. For a growth temperature of 460°C and a V/III ratio of 320 an optimum oxide thickness of 9 ± 3 Å is found. More... »

PAGES

516

References to SciGraph publications

Journal

TITLE

Nanoscale Research Letters

ISSUE

1

VOLUME

6

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/1556-276x-6-516

DOI

http://dx.doi.org/10.1186/1556-276x-6-516

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1037477798

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/21880130


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