Thickness-dependent optimization of Er3+ light emission from silicon-rich silicon oxide thin films View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2011-05-25

AUTHORS

Sébastien Cueff, Christophe Labbé, Olivier Jambois, Blas Garrido, Xavier Portier, Richard Rizk

ABSTRACT

This study investigates the influence of the film thickness on the silicon-excess-mediated sensitization of Erbium ions in Si-rich silica. The Er3+ photoluminescence at 1.5 μm, normalized to the film thickness, was found five times larger for films 1 μm-thick than that from 50-nm-thick films intended for electrically driven devices. The origin of this difference is shared by changes in the local density of optical states and depth-dependent interferences, and by limited formation of Si-based sensitizers in "thin" films, probably because of the prevailing high stress. More Si excess has significantly increased the emission from "thin" films, up to ten times. This paves the way to the realization of highly efficient electrically excited devices. More... »

PAGES

395

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/1556-276x-6-395

DOI

http://dx.doi.org/10.1186/1556-276x-6-395

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049698557

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/21711930


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