Hf-based high-k materials for Si nanocrystal floating gate memories View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2011-02-24

AUTHORS

Larysa Khomenkova, Bhabani S Sahu, Abdelilah Slaoui, Fabrice Gourbilleau

ABSTRACT

Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO2 active layers were used as charge storage layers, and their properties were studied versus deposition conditions and annealing treatment. The capacitance-voltage measurements were performed to study the charge trapping characteristics of these structures. It was shown that with specific deposition conditions and annealing treatment, a large memory window of about 6.8 V is achievable at a sweeping voltage of ± 6 V, indicating the utility of these stack structures for low-operating-voltage nonvolatile memory devices. More... »

PAGES

172

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/1556-276x-6-172

DOI

http://dx.doi.org/10.1186/1556-276x-6-172

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006095170

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/21711676


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