Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2011-02-21

AUTHORS

Olivier Debieu, Julien Cardin, Xavier Portier, Fabrice Gourbilleau

ABSTRACT

In this article, the microstructure and photoluminescence (PL) properties of Nd-doped silicon-rich silicon oxide (SRSO) are reported as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive magnetron co-sputtering, contain the same Si excess as determined by Rutherford backscattering spectrometry. Fourier transform infrared (FTIR) spectra show that a phase separation occurs during the annealing because of the condensation of the Si excess resulting in the formation of silicon nanoparticles (Si-np) as detected by high-resolution transmission electron microscopy and X-ray diffraction (XRD) measurements. Under non-resonant excitation at 488 nm, our Nd-doped SRSO films simultaneously exhibited PL from Si-np and Nd3+ demonstrating the efficient energy transfer between Si-np and Nd3+ and the sensitizing effect of Si-np. Upon increasing the Nd concentration from 0.08 to 4.9 at.%, our samples revealed a progressive quenching of the Nd3+ PL which can be correlated with the concomitant increase of disorder within the host matrix as shown by FTIR experiments. Moreover, the presence of Nd-oxide nanocrystals in the highest Nd-doped sample was established by XRD. It is, therefore, suggested that the Nd clustering, as well as disorder, are responsible for the concentration quenching of the PL of Nd3+. More... »

PAGES

161

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/1556-276x-6-161

DOI

http://dx.doi.org/10.1186/1556-276x-6-161

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1000900387

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/21711673


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