A delta-doped quantum well system with additional modulation doping View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2011-02-14

AUTHORS

Dong-Sheng Luo, Li-Hung Lin, Yi-Chun Su, Yi-Ting Wang, Zai Fong Peng, Shun-Tsung Lo, Kuang Yao Chen, Yuan-Huei Chang, Jau-Yang Wu, Yiping Lin, Sheng-Di Lin, Jeng-Chung Chen, Chun-Feng Huang, Chi-Te Liang

ABSTRACT

A delta-doped quantum well with additional modulation doping may have potential applications. Utilizing such a hybrid system, it is possible to experimentally realize an extremely high two-dimensional electron gas (2DEG) density without suffering inter-electronic-subband scattering. In this article, the authors report on transport measurements on a delta-doped quantum well system with extra modulation doping. We have observed a 0-10 direct insulator-quantum Hall (I-QH) transition where the numbers 0 and 10 correspond to the insulator and Landau level filling factor ν = 10 QH state, respectively. In situ titled-magnetic field measurements reveal that the observed direct I-QH transition depends on the magnetic component perpendicular to the quantum well, and the electron system within this structure is 2D in nature. Furthermore, transport measurements on the 2DEG of this study show that carrier density, resistance and mobility are approximately temperature (T)-independent over a wide range of T. Such results could be an advantage for applications in T-insensitive devices. More... »

PAGES

139-139

Identifiers

URI

http://scigraph.springernature.com/pub.10.1186/1556-276x-6-139

DOI

http://dx.doi.org/10.1186/1556-276x-6-139

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1001137566

PUBMED

https://www.ncbi.nlm.nih.gov/pubmed/21711656


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