High-Voltage Fast Recovery Avalanche Diodes on Silicon Carbide View Full Text


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Article Info

DATE

2020-08-31

AUTHORS

P. A. Ivanov, T. P. Samsonova, A. S. Potapov, M. F. Kudoyarov

ABSTRACT

This paper describes the laboratory samples of high-voltage (1560 V) fast recovery (20 ns) avalanche diodes based on silicon carbide (SiC). It is shown that the fabricated diodes are capable of dissipating energy up to 2.9 J/cm2 in the mode of single avalanche current pulses (1-μs pulse duration). The numerical computation of the unsteady heat process shows that self-heating by an avalanche pulse causes the local temperature in the base of the diodes to reach at least 1100 K. More... »

PAGES

956-961

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1064226920070050

DOI

http://dx.doi.org/10.1134/s1064226920070050

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1130471881


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