High-Voltage Avalanche 4H-SiC Diodes with a Protective Semi-Insulating Area View Full Text


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Article Info

DATE

2021-03

AUTHORS

P. A. Ivanov, M. F. Kudoyarov, N. M. Lebedeva, N. D. Il’inskaya, T. P. Samsonova

ABSTRACT

High-voltage 4H-SiC diodes with controlled avalanche breakdown at a reverse voltage of 1460 V have been fabricated. To eliminate edge effects on the periphery of the diodes, a semi-insulating area was created by irradiation with high-energy (53 MeV) argon ions. The fabricated diodes operate at avalanche current densities of ~103 A/cm2, and the avalanche resistance is no more than 0.03 Ω cm2. At a current pulse duration of 4 μs, the avalanche energy dissipated by the diodes to failure (due to secondary thermal breakdown) and local thermal overheating are 5 J/cm2 and 850°C, respectively. More... »

PAGES

275-277

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785021030202

DOI

http://dx.doi.org/10.1134/s1063785021030202

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1143840620


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