High-Voltage Avalanche 4H-SiC Diodes with a Protective Semi-Insulating Area View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2021-03

AUTHORS

P. A. Ivanov, M. F. Kudoyarov, N. M. Lebedeva, N. D. Il’inskaya, T. P. Samsonova

ABSTRACT

High-voltage 4H-SiC diodes with controlled avalanche breakdown at a reverse voltage of 1460 V have been fabricated. To eliminate edge effects on the periphery of the diodes, a semi-insulating area was created by irradiation with high-energy (53 MeV) argon ions. The fabricated diodes operate at avalanche current densities of ~103 A/cm2, and the avalanche resistance is no more than 0.03 Ω cm2. At a current pulse duration of 4 μs, the avalanche energy dissipated by the diodes to failure (due to secondary thermal breakdown) and local thermal overheating are 5 J/cm2 and 850°C, respectively. More... »

PAGES

275-277

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785021030202

DOI

http://dx.doi.org/10.1134/s1063785021030202

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1143840620


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ivanov", 
        "givenName": "P. A.", 
        "id": "sg:person.010230425734.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kudoyarov", 
        "givenName": "M. F.", 
        "id": "sg:person.016305715656.77", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016305715656.77"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedeva", 
        "givenName": "N. M.", 
        "id": "sg:person.011260123477.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011260123477.05"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Il\u2019inskaya", 
        "givenName": "N. D.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Samsonova", 
        "givenName": "T. P.", 
        "id": "sg:person.010276541134.45", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010276541134.45"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782616070071", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032116015", 
          "https://doi.org/10.1134/s1063782616070071"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1641133", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000583462", 
          "https://doi.org/10.1134/1.1641133"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-7091-8752-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048041985", 
          "https://doi.org/10.1007/978-3-7091-8752-4"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2021-03", 
    "datePublishedReg": "2021-03-01", 
    "description": "High-voltage 4H-SiC diodes with controlled avalanche breakdown at a reverse voltage of 1460 V have been fabricated. To eliminate edge effects on the periphery of the diodes, a semi-insulating area was created by irradiation with high-energy (53 MeV) argon ions. The fabricated diodes operate at avalanche current densities of ~103 A/cm2, and the avalanche resistance is no more than 0.03 \u03a9 cm2. At a current pulse duration of 4 \u03bcs, the avalanche energy dissipated by the diodes to failure (due to secondary thermal breakdown) and local thermal overheating are 5 J/cm2 and 850\u00b0C, respectively.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063785021030202", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "1063-7850", 
          "1090-6533"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "47"
      }
    ], 
    "keywords": [
      "high-voltage 4H-SiC diodes", 
      "avalanche current density", 
      "current pulse duration", 
      "avalanche resistance", 
      "avalanche energy", 
      "high-energy argon ions", 
      "reverse voltage", 
      "\u03a9 cm2", 
      "current density", 
      "thermal overheating", 
      "avalanche breakdown", 
      "diodes", 
      "cm2", 
      "argon ions", 
      "pulse duration", 
      "edge effects", 
      "voltage", 
      "overheating", 
      "\u03bcs", 
      "energy", 
      "density", 
      "resistance", 
      "irradiation", 
      "area", 
      "breakdown", 
      "ions", 
      "failure", 
      "effect", 
      "periphery", 
      "duration"
    ], 
    "name": "High-Voltage Avalanche 4H-SiC Diodes with a Protective Semi-Insulating Area", 
    "pagination": "275-277", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1143840620"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063785021030202"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063785021030202", 
      "https://app.dimensions.ai/details/publication/pub.1143840620"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-09-02T16:06", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220902/entities/gbq_results/article/article_907.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063785021030202"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063785021030202'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063785021030202'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063785021030202'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063785021030202'


 

This table displays all metadata directly associated to this object as RDF triples.

122 TRIPLES      21 PREDICATES      57 URIs      47 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063785021030202 schema:about anzsrc-for:02
2 schema:author N1677f7c81af7486ba1f36f7a4363fe59
3 schema:citation sg:pub.10.1007/978-3-7091-8752-4
4 sg:pub.10.1134/1.1641133
5 sg:pub.10.1134/s1063782616070071
6 schema:datePublished 2021-03
7 schema:datePublishedReg 2021-03-01
8 schema:description High-voltage 4H-SiC diodes with controlled avalanche breakdown at a reverse voltage of 1460 V have been fabricated. To eliminate edge effects on the periphery of the diodes, a semi-insulating area was created by irradiation with high-energy (53 MeV) argon ions. The fabricated diodes operate at avalanche current densities of ~103 A/cm2, and the avalanche resistance is no more than 0.03 Ω cm2. At a current pulse duration of 4 μs, the avalanche energy dissipated by the diodes to failure (due to secondary thermal breakdown) and local thermal overheating are 5 J/cm2 and 850°C, respectively.
9 schema:genre article
10 schema:isAccessibleForFree false
11 schema:isPartOf N1c22375500384a84b94150ce5ac1c3b8
12 Nfea49fe128db4d8ea05ff7425c7d9a45
13 sg:journal.1136630
14 schema:keywords area
15 argon ions
16 avalanche breakdown
17 avalanche current density
18 avalanche energy
19 avalanche resistance
20 breakdown
21 cm2
22 current density
23 current pulse duration
24 density
25 diodes
26 duration
27 edge effects
28 effect
29 energy
30 failure
31 high-energy argon ions
32 high-voltage 4H-SiC diodes
33 ions
34 irradiation
35 overheating
36 periphery
37 pulse duration
38 resistance
39 reverse voltage
40 thermal overheating
41 voltage
42 Ω cm2
43 μs
44 schema:name High-Voltage Avalanche 4H-SiC Diodes with a Protective Semi-Insulating Area
45 schema:pagination 275-277
46 schema:productId N1432490c2d6f4341bfcfefffc5b9b5c0
47 N8da4db9eeea64825a1734735cec5fa74
48 schema:sameAs https://app.dimensions.ai/details/publication/pub.1143840620
49 https://doi.org/10.1134/s1063785021030202
50 schema:sdDatePublished 2022-09-02T16:06
51 schema:sdLicense https://scigraph.springernature.com/explorer/license/
52 schema:sdPublisher N2d334fb9083c42cc826fc85c24bd426b
53 schema:url https://doi.org/10.1134/s1063785021030202
54 sgo:license sg:explorer/license/
55 sgo:sdDataset articles
56 rdf:type schema:ScholarlyArticle
57 N1432490c2d6f4341bfcfefffc5b9b5c0 schema:name doi
58 schema:value 10.1134/s1063785021030202
59 rdf:type schema:PropertyValue
60 N1677f7c81af7486ba1f36f7a4363fe59 rdf:first sg:person.010230425734.18
61 rdf:rest Naaf32366d79a47cca63bf52986860603
62 N1c22375500384a84b94150ce5ac1c3b8 schema:issueNumber 3
63 rdf:type schema:PublicationIssue
64 N2d334fb9083c42cc826fc85c24bd426b schema:name Springer Nature - SN SciGraph project
65 rdf:type schema:Organization
66 N7fb05e8a41e44f3cad9c158447d16ced rdf:first sg:person.011260123477.05
67 rdf:rest Nfb3784c4de8d4df194f9b3a2e49104e5
68 N8da4db9eeea64825a1734735cec5fa74 schema:name dimensions_id
69 schema:value pub.1143840620
70 rdf:type schema:PropertyValue
71 Naaf32366d79a47cca63bf52986860603 rdf:first sg:person.016305715656.77
72 rdf:rest N7fb05e8a41e44f3cad9c158447d16ced
73 Nd11ff4aaf2cf4abd82e3bbf1f1c204df schema:affiliation grid-institutes:grid.423485.c
74 schema:familyName Il’inskaya
75 schema:givenName N. D.
76 rdf:type schema:Person
77 Nd1b55753722a4ce38e00e15ccdf575e0 rdf:first sg:person.010276541134.45
78 rdf:rest rdf:nil
79 Nfb3784c4de8d4df194f9b3a2e49104e5 rdf:first Nd11ff4aaf2cf4abd82e3bbf1f1c204df
80 rdf:rest Nd1b55753722a4ce38e00e15ccdf575e0
81 Nfea49fe128db4d8ea05ff7425c7d9a45 schema:volumeNumber 47
82 rdf:type schema:PublicationVolume
83 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
84 schema:name Physical Sciences
85 rdf:type schema:DefinedTerm
86 sg:journal.1136630 schema:issn 1063-7850
87 1090-6533
88 schema:name Technical Physics Letters
89 schema:publisher Pleiades Publishing
90 rdf:type schema:Periodical
91 sg:person.010230425734.18 schema:affiliation grid-institutes:grid.423485.c
92 schema:familyName Ivanov
93 schema:givenName P. A.
94 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18
95 rdf:type schema:Person
96 sg:person.010276541134.45 schema:affiliation grid-institutes:grid.423485.c
97 schema:familyName Samsonova
98 schema:givenName T. P.
99 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010276541134.45
100 rdf:type schema:Person
101 sg:person.011260123477.05 schema:affiliation grid-institutes:grid.423485.c
102 schema:familyName Lebedeva
103 schema:givenName N. M.
104 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011260123477.05
105 rdf:type schema:Person
106 sg:person.016305715656.77 schema:affiliation grid-institutes:grid.423485.c
107 schema:familyName Kudoyarov
108 schema:givenName M. F.
109 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016305715656.77
110 rdf:type schema:Person
111 sg:pub.10.1007/978-3-7091-8752-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048041985
112 https://doi.org/10.1007/978-3-7091-8752-4
113 rdf:type schema:CreativeWork
114 sg:pub.10.1134/1.1641133 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000583462
115 https://doi.org/10.1134/1.1641133
116 rdf:type schema:CreativeWork
117 sg:pub.10.1134/s1063782616070071 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032116015
118 https://doi.org/10.1134/s1063782616070071
119 rdf:type schema:CreativeWork
120 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, St. Petersburg, Russia
121 schema:name Ioffe Physical Technical Institute, St. Petersburg, Russia
122 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...