Plasmachemical and Wet Etching in the Postgrowth Technology of Solar Cells Based on the GaInP/GaInAs/Ge Heterostructure View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2021-02

AUTHORS

A. V. Malevskaya, Yu. M. Zadiranov, D. A. Malevskii, P. V. Pokrovskii, N. D. Il’inskaya, V. M. Andreev

ABSTRACT

—Studies have been carried out and a technology has been developed for the formation of a separating mesa structure in fabrication of multi-junction solar cells based on the GaInP/GaInAs/Ge heterostructure. Methods for etching of the heterostructure layers have been studied: wet chemical etching in compositions based on HBr, K2Cr2O7, and H2O and the plasmachemical etching in a flow of the BCl3 working gas. A comparative analysis of the etching methods was made. Protective masks based on a photoresist layer and TiOx/SiO2 were developed. Multi-junction solar cells with low leakage current (less than 10–7 A at a voltage of 0.5–1 V) were fabricated. More... »

PAGES

114-117

Journal

TITLE

Technical Physics Letters

ISSUE

2

VOLUME

47

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785021020103

DOI

http://dx.doi.org/10.1134/s1063785021020103

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1136625134


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