Ontology type: schema:ScholarlyArticle
2021-02
AUTHORSA. V. Malevskaya, Yu. M. Zadiranov, D. A. Malevskii, P. V. Pokrovskii, N. D. Il’inskaya, V. M. Andreev
ABSTRACT—Studies have been carried out and a technology has been developed for the formation of a separating mesa structure in fabrication of multi-junction solar cells based on the GaInP/GaInAs/Ge heterostructure. Methods for etching of the heterostructure layers have been studied: wet chemical etching in compositions based on HBr, K2Cr2O7, and H2O and the plasmachemical etching in a flow of the BCl3 working gas. A comparative analysis of the etching methods was made. Protective masks based on a photoresist layer and TiOx/SiO2 were developed. Multi-junction solar cells with low leakage current (less than 10–7 A at a voltage of 0.5–1 V) were fabricated. More... »
PAGES114-117
http://scigraph.springernature.com/pub.10.1134/s1063785021020103
DOIhttp://dx.doi.org/10.1134/s1063785021020103
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