Investigation of the Effect of Doping on Transition Layers of Anisotype GaInAsP and InP Heterostructures Obtained by the Method of ... View Full Text


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Article Info

DATE

2020-10

AUTHORS

G. S. Gagis, V. I. Vasil’ev, R. V. Levin, A. E. Marichev, B. V. Pushnyi, V. I. Kuchinskii, D. Yu. Kazantsev, B. Ya. Ber

ABSTRACT

When studying doped anisotypic heterostructures with Ga1 –xInxAsyP1 –y layers grown on InP substrates with an InP buffer layer by metal organic chemical vapor deposition, the presence of transition regions is revealed in the Ga1 –xInxAsyP1 –y layer from the side of the substrate in some of the samples, along which the arsenic content (y) increases from the interface with the InP layer to the surface of the structure by a Δy value of up to 0.15, while the content of elements of the third group (x) remains constant. More... »

PAGES

961-963

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785020100053

DOI

http://dx.doi.org/10.1134/s1063785020100053

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1132506183


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gagis", 
        "givenName": "G. S.", 
        "id": "sg:person.012115013645.83", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012115013645.83"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vasil\u2019ev", 
        "givenName": "V. I.", 
        "id": "sg:person.016116776273.31", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016116776273.31"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Levin", 
        "givenName": "R. V.", 
        "id": "sg:person.014646260517.27", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014646260517.27"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Marichev", 
        "givenName": "A. E.", 
        "id": "sg:person.07724472245.61", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07724472245.61"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Pushnyi", 
        "givenName": "B. V.", 
        "id": "sg:person.011356344575.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011356344575.10"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg State Electrotechnical University \u201cLETI\u201d, 197376, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "St. Petersburg State Electrotechnical University \u201cLETI\u201d, 197376, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kuchinskii", 
        "givenName": "V. I.", 
        "id": "sg:person.010076573456.26", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010076573456.26"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kazantsev", 
        "givenName": "D. Yu.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ber", 
        "givenName": "B. Ya.", 
        "id": "sg:person.013474671571.59", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s106378261911006x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1122365396", 
          "https://doi.org/10.1134/s106378261911006x"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782618130079", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1110893912", 
          "https://doi.org/10.1134/s1063782618130079"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2020-10", 
    "datePublishedReg": "2020-10-01", 
    "description": "When studying doped anisotypic heterostructures with Ga1 \u2013xInxAsyP1 \u2013y layers grown on InP substrates with an InP buffer layer by metal organic chemical vapor deposition, the presence of transition regions is revealed in the Ga1 \u2013xInxAsyP1 \u2013y layer from the side of the substrate in some of the samples, along which\u00a0the arsenic content (y) increases from the interface with the InP layer to the surface of the structure by a \u0394y value of up to 0.15, while the content of elements of the third group (x) remains constant.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063785020100053", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "10", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "46"
      }
    ], 
    "keywords": [
      "y layers", 
      "metal-organic chemical vapor deposition", 
      "organic chemical vapor deposition", 
      "InP buffer layer", 
      "chemical vapor deposition", 
      "buffer layer", 
      "vapor deposition", 
      "InP layers", 
      "transition layer", 
      "InP substrates", 
      "InP heterostructures", 
      "layer", 
      "heterostructures", 
      "transition region", 
      "substrate", 
      "MOCVD", 
      "GaInAsP", 
      "content of elements", 
      "interface", 
      "surface", 
      "deposition", 
      "arsenic content", 
      "content", 
      "structure", 
      "investigation", 
      "method", 
      "elements", 
      "side", 
      "values", 
      "effect", 
      "samples", 
      "region", 
      "presence", 
      "group", 
      "third group"
    ], 
    "name": "Investigation of the Effect of Doping on Transition Layers of Anisotype GaInAsP and InP Heterostructures Obtained by the Method of MOCVD", 
    "pagination": "961-963", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1132506183"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063785020100053"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063785020100053", 
      "https://app.dimensions.ai/details/publication/pub.1132506183"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-10T10:27", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220509/entities/gbq_results/article/article_845.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063785020100053"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

149 TRIPLES      22 PREDICATES      62 URIs      53 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063785020100053 schema:about anzsrc-for:02
2 schema:author Ne3691bacf9c64d52a4734e5a2759db65
3 schema:citation sg:pub.10.1134/s1063782618130079
4 sg:pub.10.1134/s106378261911006x
5 schema:datePublished 2020-10
6 schema:datePublishedReg 2020-10-01
7 schema:description When studying doped anisotypic heterostructures with Ga1 –xInxAsyP1 –y layers grown on InP substrates with an InP buffer layer by metal organic chemical vapor deposition, the presence of transition regions is revealed in the Ga1 –xInxAsyP1 –y layer from the side of the substrate in some of the samples, along which the arsenic content (y) increases from the interface with the InP layer to the surface of the structure by a Δy value of up to 0.15, while the content of elements of the third group (x) remains constant.
8 schema:genre article
9 schema:inLanguage en
10 schema:isAccessibleForFree false
11 schema:isPartOf N2e47b4b589e14b79a35896ff6418b171
12 N99a7b1dd4809400394396a7a1b0d0679
13 sg:journal.1136630
14 schema:keywords GaInAsP
15 InP buffer layer
16 InP heterostructures
17 InP layers
18 InP substrates
19 MOCVD
20 arsenic content
21 buffer layer
22 chemical vapor deposition
23 content
24 content of elements
25 deposition
26 effect
27 elements
28 group
29 heterostructures
30 interface
31 investigation
32 layer
33 metal-organic chemical vapor deposition
34 method
35 organic chemical vapor deposition
36 presence
37 region
38 samples
39 side
40 structure
41 substrate
42 surface
43 third group
44 transition layer
45 transition region
46 values
47 vapor deposition
48 y layers
49 schema:name Investigation of the Effect of Doping on Transition Layers of Anisotype GaInAsP and InP Heterostructures Obtained by the Method of MOCVD
50 schema:pagination 961-963
51 schema:productId N0f01d35aef42400a913289fee28af4aa
52 N655e3e5bb67c4c86bd736b6fa43631c8
53 schema:sameAs https://app.dimensions.ai/details/publication/pub.1132506183
54 https://doi.org/10.1134/s1063785020100053
55 schema:sdDatePublished 2022-05-10T10:27
56 schema:sdLicense https://scigraph.springernature.com/explorer/license/
57 schema:sdPublisher N95a89808f1b548c1b33e6026b8607a01
58 schema:url https://doi.org/10.1134/s1063785020100053
59 sgo:license sg:explorer/license/
60 sgo:sdDataset articles
61 rdf:type schema:ScholarlyArticle
62 N0a34b9474cc64b0c90ffc2e98ee525aa rdf:first sg:person.013474671571.59
63 rdf:rest rdf:nil
64 N0f01d35aef42400a913289fee28af4aa schema:name dimensions_id
65 schema:value pub.1132506183
66 rdf:type schema:PropertyValue
67 N2bef06f441414ce689055a852b29ea30 rdf:first N60269f59730a46bd97a274f2e48d6138
68 rdf:rest N0a34b9474cc64b0c90ffc2e98ee525aa
69 N2e47b4b589e14b79a35896ff6418b171 schema:volumeNumber 46
70 rdf:type schema:PublicationVolume
71 N3ce47075e1ee4643b37f75c9d2205a2c rdf:first sg:person.016116776273.31
72 rdf:rest N5877b3f64d4d4c5fb4c66ee4ac8eafb9
73 N5877b3f64d4d4c5fb4c66ee4ac8eafb9 rdf:first sg:person.014646260517.27
74 rdf:rest Nae04bbf0626c4cd59e52be1689404412
75 N5e5f8cda85514a1886d2047039f9ea92 rdf:first sg:person.011356344575.10
76 rdf:rest Ndc2dbb6a4b0144a1ad8f02142553af63
77 N60269f59730a46bd97a274f2e48d6138 schema:affiliation grid-institutes:grid.423485.c
78 schema:familyName Kazantsev
79 schema:givenName D. Yu.
80 rdf:type schema:Person
81 N655e3e5bb67c4c86bd736b6fa43631c8 schema:name doi
82 schema:value 10.1134/s1063785020100053
83 rdf:type schema:PropertyValue
84 N95a89808f1b548c1b33e6026b8607a01 schema:name Springer Nature - SN SciGraph project
85 rdf:type schema:Organization
86 N99a7b1dd4809400394396a7a1b0d0679 schema:issueNumber 10
87 rdf:type schema:PublicationIssue
88 Nae04bbf0626c4cd59e52be1689404412 rdf:first sg:person.07724472245.61
89 rdf:rest N5e5f8cda85514a1886d2047039f9ea92
90 Ndc2dbb6a4b0144a1ad8f02142553af63 rdf:first sg:person.010076573456.26
91 rdf:rest N2bef06f441414ce689055a852b29ea30
92 Ne3691bacf9c64d52a4734e5a2759db65 rdf:first sg:person.012115013645.83
93 rdf:rest N3ce47075e1ee4643b37f75c9d2205a2c
94 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
95 schema:name Physical Sciences
96 rdf:type schema:DefinedTerm
97 sg:journal.1136630 schema:issn 0320-0116
98 0360-120X
99 schema:name Technical Physics Letters
100 schema:publisher Pleiades Publishing
101 rdf:type schema:Periodical
102 sg:person.010076573456.26 schema:affiliation grid-institutes:grid.15447.33
103 schema:familyName Kuchinskii
104 schema:givenName V. I.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010076573456.26
106 rdf:type schema:Person
107 sg:person.011356344575.10 schema:affiliation grid-institutes:grid.423485.c
108 schema:familyName Pushnyi
109 schema:givenName B. V.
110 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011356344575.10
111 rdf:type schema:Person
112 sg:person.012115013645.83 schema:affiliation grid-institutes:grid.423485.c
113 schema:familyName Gagis
114 schema:givenName G. S.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012115013645.83
116 rdf:type schema:Person
117 sg:person.013474671571.59 schema:affiliation grid-institutes:grid.423485.c
118 schema:familyName Ber
119 schema:givenName B. Ya.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59
121 rdf:type schema:Person
122 sg:person.014646260517.27 schema:affiliation grid-institutes:grid.423485.c
123 schema:familyName Levin
124 schema:givenName R. V.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014646260517.27
126 rdf:type schema:Person
127 sg:person.016116776273.31 schema:affiliation grid-institutes:grid.423485.c
128 schema:familyName Vasil’ev
129 schema:givenName V. I.
130 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016116776273.31
131 rdf:type schema:Person
132 sg:person.07724472245.61 schema:affiliation grid-institutes:grid.423485.c
133 schema:familyName Marichev
134 schema:givenName A. E.
135 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07724472245.61
136 rdf:type schema:Person
137 sg:pub.10.1134/s1063782618130079 schema:sameAs https://app.dimensions.ai/details/publication/pub.1110893912
138 https://doi.org/10.1134/s1063782618130079
139 rdf:type schema:CreativeWork
140 sg:pub.10.1134/s106378261911006x schema:sameAs https://app.dimensions.ai/details/publication/pub.1122365396
141 https://doi.org/10.1134/s106378261911006x
142 rdf:type schema:CreativeWork
143 grid-institutes:grid.15447.33 schema:alternateName St. Petersburg State Electrotechnical University “LETI”, 197376, St. Petersburg, Russia
144 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
145 St. Petersburg State Electrotechnical University “LETI”, 197376, St. Petersburg, Russia
146 rdf:type schema:Organization
147 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
148 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
149 rdf:type schema:Organization
 




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