An Increase of Threading Dislocations Filtering Efficiency in Al2O3 Templates with Faceted Surface Morphology During a Growth by Molecular Beam ... View Full Text


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Article Info

DATE

2020-06

AUTHORS

A. V. Myasoedov, D. V. Nechaev, V. V. Ratnikov, A. E. Kalmykov, L. M. Sorokin, V. N. Jmerik

ABSTRACT

We present the results of a transmission electron microscopy and X-ray diffractometry investigation of AlN/c-Al2O3 templates with GaN ultrathin insertions grown by plasma-assisted molecular beam epitaxy. It has been shown that AlN buffer layers with faceted surface morphology provide a greater threading dislocation density reduction than smooth layers. The filtering effect of GaN ultrathin insertions has been confirmed. More... »

PAGES

543-547

References to SciGraph publications

  • 2014-07-04. Role of SiC substrate polarity on the growth and properties of bulk AlN single crystals in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1063785020060097

    DOI

    http://dx.doi.org/10.1134/s1063785020060097

    DIMENSIONS

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