Ontology type: schema:ScholarlyArticle
2020-06
AUTHORSA. V. Myasoedov, D. V. Nechaev, V. V. Ratnikov, A. E. Kalmykov, L. M. Sorokin, V. N. Jmerik
ABSTRACTWe present the results of a transmission electron microscopy and X-ray diffractometry investigation of AlN/c-Al2O3 templates with GaN ultrathin insertions grown by plasma-assisted molecular beam epitaxy. It has been shown that AlN buffer layers with faceted surface morphology provide a greater threading dislocation density reduction than smooth layers. The filtering effect of GaN ultrathin insertions has been confirmed. More... »
PAGES543-547
http://scigraph.springernature.com/pub.10.1134/s1063785020060097
DOIhttp://dx.doi.org/10.1134/s1063785020060097
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