Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2020-04

AUTHORS

V. V. Ratnikov, D. V. Nechaev, A. V. Myasoedov, O. A. Koshelev, V. N. Zhmerik

ABSTRACT

AlN/c-sapphire templates grown by plasma-activated molecular beam epitaxy have been studied using multicrystal X-ray diffractometry and a multi-beam optical stress meter system. Studies of the seed and buffer layers grown at different ratios of Al and N* growth flows and substrate temperatures have shown that templates with small tensile elastic stresses (<0.5 GPa) and densities of screw and edge grown-in dislocations 4 × 108 and 8 × 109 cm−2, respectively, can be produced. More... »

PAGES

389-392

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785020040240

DOI

http://dx.doi.org/10.1134/s1063785020040240

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1128249360


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