Ontology type: schema:ScholarlyArticle
2020-03
AUTHORSA. A. Lomov, B. M. Seredin, S. Yu. Martyushov, A. N. Zaichenko, S. G. Simakin, I. L. Shul’pina
ABSTRACTA technique that allows one to form thick thermomigration silicon layers heavily doped with gallium for prospective power electronic devices is proposed. The dependences of the perfection of structure and the composition of the layers on the temperature of their formation were studied by the methods of X-ray topography, X-ray reflection curves, and secondary-ion mass spectrometry. It is established that the formed layers are single-crystal layers and do not contain misfit dislocations at the interface with the silicon substrate. It is shown that the concentration of gallium in the layers can be varied in the range of (1.6–4.8) × 1019 cm–3, which is higher than the concentration achieved in the case in which silicon is doped with aluminum. More... »
PAGES279-282
http://scigraph.springernature.com/pub.10.1134/s1063785020030268
DOIhttp://dx.doi.org/10.1134/s1063785020030268
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