Structural Perfection and Composition of Gallium-Doped Thermomigration Silicon Layers View Full Text


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Article Info

DATE

2020-03

AUTHORS

A. A. Lomov, B. M. Seredin, S. Yu. Martyushov, A. N. Zaichenko, S. G. Simakin, I. L. Shul’pina

ABSTRACT

A technique that allows one to form thick thermomigration silicon layers heavily doped with gallium for prospective power electronic devices is proposed. The dependences of the perfection of structure and the composition of the layers on the temperature of their formation were studied by the methods of X-ray topography, X-ray reflection curves, and secondary-ion mass spectrometry. It is established that the formed layers are single-crystal layers and do not contain misfit dislocations at the interface with the silicon substrate. It is shown that the concentration of gallium in the layers can be varied in the range of (1.6–4.8) × 1019 cm–3, which is higher than the concentration achieved in the case in which silicon is doped with aluminum. More... »

PAGES

279-282

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785020030268

DOI

http://dx.doi.org/10.1134/s1063785020030268

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1127170800


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Valiev Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Valiev Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lomov", 
        "givenName": "A. A.", 
        "id": "sg:person.016530371175.37", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016530371175.37"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Platov South Russian State Polytechnic Institute (NPI), Novocherkassk, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Platov South Russian State Polytechnic Institute (NPI), Novocherkassk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Seredin", 
        "givenName": "B. M.", 
        "id": "sg:person.010503254215.72", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010503254215.72"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Technological Institute of Superhard and New Carbon Materials, TroitskMoscow, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Technological Institute of Superhard and New Carbon Materials, TroitskMoscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Martyushov", 
        "givenName": "S. Yu.", 
        "id": "sg:person.01261650645.15", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01261650645.15"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Platov South Russian State Polytechnic Institute (NPI), Novocherkassk, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Platov South Russian State Polytechnic Institute (NPI), Novocherkassk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zaichenko", 
        "givenName": "A. N.", 
        "id": "sg:person.012327714564.39", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012327714564.39"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Valiev Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences, Yaroslavl, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Valiev Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences, Yaroslavl, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Simakin", 
        "givenName": "S. G.", 
        "id": "sg:person.014255337761.03", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014255337761.03"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shul\u2019pina", 
        "givenName": "I. L.", 
        "id": "sg:person.0656536117.96", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0656536117.96"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782617060227", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1085750405", 
          "https://doi.org/10.1134/s1063782617060227"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2020-03", 
    "datePublishedReg": "2020-03-01", 
    "description": "A technique that allows one to form thick thermomigration silicon layers heavily doped with gallium for prospective power electronic devices is proposed. The dependences of the perfection of structure and the composition of the layers on the temperature of their formation were studied by the methods of X-ray topography, X-ray reflection curves, and secondary-ion mass spectrometry. It is established that the formed layers are single-crystal layers and do not contain misfit dislocations at the interface with the silicon substrate. It is shown that the concentration of gallium in the layers can be varied in the range of (1.6\u20134.8) \u00d7 1019 cm\u20133, which is higher than the concentration achieved in the case in which silicon is doped with aluminum.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063785020030268", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "46"
      }
    ], 
    "keywords": [
      "X-ray reflection curves", 
      "perfection of structure", 
      "silicon layer", 
      "power electronic devices", 
      "silicon substrate", 
      "reflection curves", 
      "electronic devices", 
      "single crystal layers", 
      "X-ray topography", 
      "compositions of gallium", 
      "structural perfection", 
      "concentration of gallium", 
      "silicon", 
      "dependence", 
      "layer", 
      "misfit dislocations", 
      "gallium", 
      "curves", 
      "technique", 
      "structure", 
      "devices", 
      "perfection", 
      "cases", 
      "temperature", 
      "range", 
      "topography", 
      "interface", 
      "substrate", 
      "dislocations", 
      "secondary ion mass spectrometry", 
      "aluminum", 
      "formation", 
      "composition", 
      "concentration", 
      "method", 
      "spectrometry", 
      "mass spectrometry"
    ], 
    "name": "Structural Perfection and Composition of Gallium-Doped Thermomigration Silicon Layers", 
    "pagination": "279-282", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1127170800"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063785020030268"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063785020030268", 
      "https://app.dimensions.ai/details/publication/pub.1127170800"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-10T10:26", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220509/entities/gbq_results/article/article_854.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063785020030268"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

140 TRIPLES      22 PREDICATES      63 URIs      55 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063785020030268 schema:about anzsrc-for:02
2 schema:author N93f84c909e164029afa0ba344ccfe31e
3 schema:citation sg:pub.10.1134/s1063782617060227
4 schema:datePublished 2020-03
5 schema:datePublishedReg 2020-03-01
6 schema:description A technique that allows one to form thick thermomigration silicon layers heavily doped with gallium for prospective power electronic devices is proposed. The dependences of the perfection of structure and the composition of the layers on the temperature of their formation were studied by the methods of X-ray topography, X-ray reflection curves, and secondary-ion mass spectrometry. It is established that the formed layers are single-crystal layers and do not contain misfit dislocations at the interface with the silicon substrate. It is shown that the concentration of gallium in the layers can be varied in the range of (1.6–4.8) × 1019 cm–3, which is higher than the concentration achieved in the case in which silicon is doped with aluminum.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf N02792888db7e4c2cbb1d1eb3182857e9
11 N5244d91f84ac475091f06dbfdd955cbb
12 sg:journal.1136630
13 schema:keywords X-ray reflection curves
14 X-ray topography
15 aluminum
16 cases
17 composition
18 compositions of gallium
19 concentration
20 concentration of gallium
21 curves
22 dependence
23 devices
24 dislocations
25 electronic devices
26 formation
27 gallium
28 interface
29 layer
30 mass spectrometry
31 method
32 misfit dislocations
33 perfection
34 perfection of structure
35 power electronic devices
36 range
37 reflection curves
38 secondary ion mass spectrometry
39 silicon
40 silicon layer
41 silicon substrate
42 single crystal layers
43 spectrometry
44 structural perfection
45 structure
46 substrate
47 technique
48 temperature
49 topography
50 schema:name Structural Perfection and Composition of Gallium-Doped Thermomigration Silicon Layers
51 schema:pagination 279-282
52 schema:productId N470f70e7e6f04ce5bad77eb16e5dd50d
53 Nc30727af23a740a686e0d9ebe8f34ff5
54 schema:sameAs https://app.dimensions.ai/details/publication/pub.1127170800
55 https://doi.org/10.1134/s1063785020030268
56 schema:sdDatePublished 2022-05-10T10:26
57 schema:sdLicense https://scigraph.springernature.com/explorer/license/
58 schema:sdPublisher N76002b6811a3464fbb00ee4a59bb65b3
59 schema:url https://doi.org/10.1134/s1063785020030268
60 sgo:license sg:explorer/license/
61 sgo:sdDataset articles
62 rdf:type schema:ScholarlyArticle
63 N02792888db7e4c2cbb1d1eb3182857e9 schema:volumeNumber 46
64 rdf:type schema:PublicationVolume
65 N39538b26e5804212b8c7816f96bc084d rdf:first sg:person.0656536117.96
66 rdf:rest rdf:nil
67 N4486722bb3a04bcc9f28f639f45d8340 rdf:first sg:person.014255337761.03
68 rdf:rest N39538b26e5804212b8c7816f96bc084d
69 N470f70e7e6f04ce5bad77eb16e5dd50d schema:name dimensions_id
70 schema:value pub.1127170800
71 rdf:type schema:PropertyValue
72 N5244d91f84ac475091f06dbfdd955cbb schema:issueNumber 3
73 rdf:type schema:PublicationIssue
74 N76002b6811a3464fbb00ee4a59bb65b3 schema:name Springer Nature - SN SciGraph project
75 rdf:type schema:Organization
76 N7fc129ac28974760b327d38f1e280691 rdf:first sg:person.010503254215.72
77 rdf:rest Ne0c4f08f3cf44d9eb1b75abb89747bc9
78 N93f84c909e164029afa0ba344ccfe31e rdf:first sg:person.016530371175.37
79 rdf:rest N7fc129ac28974760b327d38f1e280691
80 Nc30727af23a740a686e0d9ebe8f34ff5 schema:name doi
81 schema:value 10.1134/s1063785020030268
82 rdf:type schema:PropertyValue
83 Nda9e0de3fd794e089ebcc610ee95c4de rdf:first sg:person.012327714564.39
84 rdf:rest N4486722bb3a04bcc9f28f639f45d8340
85 Ne0c4f08f3cf44d9eb1b75abb89747bc9 rdf:first sg:person.01261650645.15
86 rdf:rest Nda9e0de3fd794e089ebcc610ee95c4de
87 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
88 schema:name Physical Sciences
89 rdf:type schema:DefinedTerm
90 sg:journal.1136630 schema:issn 0320-0116
91 0360-120X
92 schema:name Technical Physics Letters
93 schema:publisher Pleiades Publishing
94 rdf:type schema:Periodical
95 sg:person.010503254215.72 schema:affiliation grid-institutes:None
96 schema:familyName Seredin
97 schema:givenName B. M.
98 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010503254215.72
99 rdf:type schema:Person
100 sg:person.012327714564.39 schema:affiliation grid-institutes:None
101 schema:familyName Zaichenko
102 schema:givenName A. N.
103 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012327714564.39
104 rdf:type schema:Person
105 sg:person.01261650645.15 schema:affiliation grid-institutes:None
106 schema:familyName Martyushov
107 schema:givenName S. Yu.
108 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01261650645.15
109 rdf:type schema:Person
110 sg:person.014255337761.03 schema:affiliation grid-institutes:grid.4886.2
111 schema:familyName Simakin
112 schema:givenName S. G.
113 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014255337761.03
114 rdf:type schema:Person
115 sg:person.016530371175.37 schema:affiliation grid-institutes:grid.4886.2
116 schema:familyName Lomov
117 schema:givenName A. A.
118 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016530371175.37
119 rdf:type schema:Person
120 sg:person.0656536117.96 schema:affiliation grid-institutes:grid.423485.c
121 schema:familyName Shul’pina
122 schema:givenName I. L.
123 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0656536117.96
124 rdf:type schema:Person
125 sg:pub.10.1134/s1063782617060227 schema:sameAs https://app.dimensions.ai/details/publication/pub.1085750405
126 https://doi.org/10.1134/s1063782617060227
127 rdf:type schema:CreativeWork
128 grid-institutes:None schema:alternateName Platov South Russian State Polytechnic Institute (NPI), Novocherkassk, Russia
129 Technological Institute of Superhard and New Carbon Materials, TroitskMoscow, Russia
130 schema:name Platov South Russian State Polytechnic Institute (NPI), Novocherkassk, Russia
131 Technological Institute of Superhard and New Carbon Materials, TroitskMoscow, Russia
132 rdf:type schema:Organization
133 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
134 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
135 rdf:type schema:Organization
136 grid-institutes:grid.4886.2 schema:alternateName Valiev Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia
137 Valiev Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences, Yaroslavl, Russia
138 schema:name Valiev Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia
139 Valiev Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences, Yaroslavl, Russia
140 rdf:type schema:Organization
 




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