Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2020-03

AUTHORS

V. V. Kozlovski, O. Korol’kov, K. S. Davidovskaya, A. A. Lebedev, M. E. Levinshtein, N. Slepchuk, A. M. Strel’chuk, J. Toompuu

ABSTRACT

The influence of proton irradiation at high temperatures (“hot” irradiation) on the capacitance–voltage and current–voltage characteristics of semiconductor devices based on silicon carbide has been studied for the first time. The experiments were performed on commercial high-voltage integrated 4H-SiC Schottky diodes with a blocking voltage of 1700 V, which were irradiated by 15-MeV protons at temperatures within 20–400°C. It is established that the most sensitive parameter determining the degree of radiation-induced damage is the ohmic resistance of the base, which monotonically increases with irradiation dose D. Under “hot” irradiation conditions, the radiation resistance of diodes is significantly higher as compared to that observed in the case of low-temperature (“cold”) irradiation. It is concluded that an increase in the temperature is accompanied by a decrease in the rate of formation of deep defect centers in the upper half of the bandgap of silicon carbide. More... »

PAGES

287-289

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785020030244

DOI

http://dx.doi.org/10.1134/s1063785020030244

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1127168606


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Peter the Great St. Petersburg Polytechnic University, 195021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.32495.39", 
          "name": [
            "Peter the Great St. Petersburg Polytechnic University, 195021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kozlovski", 
        "givenName": "V. V.", 
        "id": "sg:person.011730241573.99", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Tallinn University of Technology, Tallinn, Estonia", 
          "id": "http://www.grid.ac/institutes/grid.6988.f", 
          "name": [
            "Tallinn University of Technology, Tallinn, Estonia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Korol\u2019kov", 
        "givenName": "O.", 
        "id": "sg:person.011420145167.17", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011420145167.17"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Davidovskaya", 
        "givenName": "K. S.", 
        "id": "sg:person.014112130041.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014112130041.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedev", 
        "givenName": "A. A.", 
        "id": "sg:person.011264364575.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Levinshtein", 
        "givenName": "M. E.", 
        "id": "sg:person.013715361533.07", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013715361533.07"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Tallinn University of Technology, Tallinn, Estonia", 
          "id": "http://www.grid.ac/institutes/grid.6988.f", 
          "name": [
            "Tallinn University of Technology, Tallinn, Estonia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Slepchuk", 
        "givenName": "N.", 
        "id": "sg:person.07421013577.60", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07421013577.60"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Strel\u2019chuk", 
        "givenName": "A. M.", 
        "id": "sg:person.015012127015.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015012127015.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Tallinn University of Technology, Tallinn, Estonia", 
          "id": "http://www.grid.ac/institutes/grid.6988.f", 
          "name": [
            "Tallinn University of Technology, Tallinn, Estonia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Toompuu", 
        "givenName": "J.", 
        "id": "sg:person.014336650775.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014336650775.05"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/1.1188089", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031320022", 
          "https://doi.org/10.1134/1.1188089"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063785019060117", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1118069872", 
          "https://doi.org/10.1134/s1063785019060117"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s106378261906006x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1117021758", 
          "https://doi.org/10.1134/s106378261906006x"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782612040069", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1011303806", 
          "https://doi.org/10.1134/s1063782612040069"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2020-03", 
    "datePublishedReg": "2020-03-01", 
    "description": "The influence of proton irradiation at high temperatures (\u201chot\u201d irradiation) on the capacitance\u2013voltage and current\u2013voltage characteristics of semiconductor devices based on silicon carbide has been studied for the first time. The experiments were performed on commercial high-voltage integrated 4H-SiC Schottky diodes with a blocking voltage of 1700 V, which were irradiated by 15-MeV protons at temperatures within 20\u2013400\u00b0C. It is established that the most sensitive parameter determining the degree of radiation-induced damage is the ohmic resistance of the base, which monotonically increases with irradiation dose D. Under \u201chot\u201d irradiation conditions, the radiation resistance of diodes is significantly higher as compared to that observed in the case of low-temperature (\u201ccold\u201d) irradiation. It is concluded that an increase in the temperature is accompanied by a decrease in the rate of formation of deep defect centers in the upper half of the bandgap of silicon carbide.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063785020030244", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "46"
      }
    ], 
    "keywords": [
      "silicon carbide", 
      "High-Power High", 
      "Silicon Carbide Schottky", 
      "current-voltage characteristics", 
      "semiconductor devices", 
      "ohmic resistance", 
      "low temperature irradiation", 
      "deep defect centers", 
      "irradiation temperature", 
      "high temperature", 
      "carbide", 
      "Schottky", 
      "irradiation conditions", 
      "temperature", 
      "proton irradiation", 
      "sensitive parameters", 
      "defect centers", 
      "voltage", 
      "radiation resistance", 
      "diodes", 
      "bandgap", 
      "irradiation", 
      "devices", 
      "resistance", 
      "characteristics", 
      "influence", 
      "upper half", 
      "first time", 
      "parameters", 
      "rate of formation", 
      "conditions", 
      "experiments", 
      "High", 
      "formation", 
      "damage", 
      "time", 
      "increase", 
      "rate", 
      "base", 
      "decrease", 
      "degree", 
      "cases", 
      "protons", 
      "radiation-induced damage", 
      "center", 
      "half"
    ], 
    "name": "Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes", 
    "pagination": "287-289", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1127168606"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063785020030244"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063785020030244", 
      "https://app.dimensions.ai/details/publication/pub.1127168606"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:37", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_862.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063785020030244"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063785020030244'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063785020030244'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063785020030244'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063785020030244'


 

This table displays all metadata directly associated to this object as RDF triples.

171 TRIPLES      22 PREDICATES      75 URIs      64 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063785020030244 schema:about anzsrc-for:02
2 schema:author N7748bc0950fd412fa020590f0b861b69
3 schema:citation sg:pub.10.1134/1.1188089
4 sg:pub.10.1134/s1063782612040069
5 sg:pub.10.1134/s106378261906006x
6 sg:pub.10.1134/s1063785019060117
7 schema:datePublished 2020-03
8 schema:datePublishedReg 2020-03-01
9 schema:description The influence of proton irradiation at high temperatures (“hot” irradiation) on the capacitance–voltage and current–voltage characteristics of semiconductor devices based on silicon carbide has been studied for the first time. The experiments were performed on commercial high-voltage integrated 4H-SiC Schottky diodes with a blocking voltage of 1700 V, which were irradiated by 15-MeV protons at temperatures within 20–400°C. It is established that the most sensitive parameter determining the degree of radiation-induced damage is the ohmic resistance of the base, which monotonically increases with irradiation dose D. Under “hot” irradiation conditions, the radiation resistance of diodes is significantly higher as compared to that observed in the case of low-temperature (“cold”) irradiation. It is concluded that an increase in the temperature is accompanied by a decrease in the rate of formation of deep defect centers in the upper half of the bandgap of silicon carbide.
10 schema:genre article
11 schema:inLanguage en
12 schema:isAccessibleForFree false
13 schema:isPartOf N1a3a3012613446c89689eca66bdc55fb
14 Nf4588a91b89c40fb937db1c0c43ea120
15 sg:journal.1136630
16 schema:keywords High
17 High-Power High
18 Schottky
19 Silicon Carbide Schottky
20 bandgap
21 base
22 carbide
23 cases
24 center
25 characteristics
26 conditions
27 current-voltage characteristics
28 damage
29 decrease
30 deep defect centers
31 defect centers
32 degree
33 devices
34 diodes
35 experiments
36 first time
37 formation
38 half
39 high temperature
40 increase
41 influence
42 irradiation
43 irradiation conditions
44 irradiation temperature
45 low temperature irradiation
46 ohmic resistance
47 parameters
48 proton irradiation
49 protons
50 radiation resistance
51 radiation-induced damage
52 rate
53 rate of formation
54 resistance
55 semiconductor devices
56 sensitive parameters
57 silicon carbide
58 temperature
59 time
60 upper half
61 voltage
62 schema:name Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes
63 schema:pagination 287-289
64 schema:productId N55bf5e49e56f47f9ae9b229703591e54
65 Nca8d58bf982b4aa4b42b8f7d71e852e1
66 schema:sameAs https://app.dimensions.ai/details/publication/pub.1127168606
67 https://doi.org/10.1134/s1063785020030244
68 schema:sdDatePublished 2022-05-20T07:37
69 schema:sdLicense https://scigraph.springernature.com/explorer/license/
70 schema:sdPublisher Ne1b0059122764cddb94c585c4b08ea1b
71 schema:url https://doi.org/10.1134/s1063785020030244
72 sgo:license sg:explorer/license/
73 sgo:sdDataset articles
74 rdf:type schema:ScholarlyArticle
75 N1a3a3012613446c89689eca66bdc55fb schema:volumeNumber 46
76 rdf:type schema:PublicationVolume
77 N1bbd4dd401e64711968d4c8cd56b1443 rdf:first sg:person.014112130041.53
78 rdf:rest N525b1ab364204fd4989fbac1ace4380b
79 N4c610203783b42ad95e101e184bb17d4 rdf:first sg:person.07421013577.60
80 rdf:rest Na84d0784e8214f778eabaa4631aaacdd
81 N525b1ab364204fd4989fbac1ace4380b rdf:first sg:person.011264364575.18
82 rdf:rest Nbc13812ddfb048a08f1fdb0776866764
83 N55bf5e49e56f47f9ae9b229703591e54 schema:name doi
84 schema:value 10.1134/s1063785020030244
85 rdf:type schema:PropertyValue
86 N6761dde838494626b2d65e496ab7def9 rdf:first sg:person.011420145167.17
87 rdf:rest N1bbd4dd401e64711968d4c8cd56b1443
88 N7748bc0950fd412fa020590f0b861b69 rdf:first sg:person.011730241573.99
89 rdf:rest N6761dde838494626b2d65e496ab7def9
90 N883030a28a0d4264a5a087d5339ea208 rdf:first sg:person.014336650775.05
91 rdf:rest rdf:nil
92 Na84d0784e8214f778eabaa4631aaacdd rdf:first sg:person.015012127015.53
93 rdf:rest N883030a28a0d4264a5a087d5339ea208
94 Nbc13812ddfb048a08f1fdb0776866764 rdf:first sg:person.013715361533.07
95 rdf:rest N4c610203783b42ad95e101e184bb17d4
96 Nca8d58bf982b4aa4b42b8f7d71e852e1 schema:name dimensions_id
97 schema:value pub.1127168606
98 rdf:type schema:PropertyValue
99 Ne1b0059122764cddb94c585c4b08ea1b schema:name Springer Nature - SN SciGraph project
100 rdf:type schema:Organization
101 Nf4588a91b89c40fb937db1c0c43ea120 schema:issueNumber 3
102 rdf:type schema:PublicationIssue
103 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
104 schema:name Physical Sciences
105 rdf:type schema:DefinedTerm
106 sg:journal.1136630 schema:issn 0320-0116
107 0360-120X
108 schema:name Technical Physics Letters
109 schema:publisher Pleiades Publishing
110 rdf:type schema:Periodical
111 sg:person.011264364575.18 schema:affiliation grid-institutes:grid.423485.c
112 schema:familyName Lebedev
113 schema:givenName A. A.
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18
115 rdf:type schema:Person
116 sg:person.011420145167.17 schema:affiliation grid-institutes:grid.6988.f
117 schema:familyName Korol’kov
118 schema:givenName O.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011420145167.17
120 rdf:type schema:Person
121 sg:person.011730241573.99 schema:affiliation grid-institutes:grid.32495.39
122 schema:familyName Kozlovski
123 schema:givenName V. V.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99
125 rdf:type schema:Person
126 sg:person.013715361533.07 schema:affiliation grid-institutes:grid.423485.c
127 schema:familyName Levinshtein
128 schema:givenName M. E.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013715361533.07
130 rdf:type schema:Person
131 sg:person.014112130041.53 schema:affiliation grid-institutes:grid.423485.c
132 schema:familyName Davidovskaya
133 schema:givenName K. S.
134 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014112130041.53
135 rdf:type schema:Person
136 sg:person.014336650775.05 schema:affiliation grid-institutes:grid.6988.f
137 schema:familyName Toompuu
138 schema:givenName J.
139 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014336650775.05
140 rdf:type schema:Person
141 sg:person.015012127015.53 schema:affiliation grid-institutes:grid.423485.c
142 schema:familyName Strel’chuk
143 schema:givenName A. M.
144 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015012127015.53
145 rdf:type schema:Person
146 sg:person.07421013577.60 schema:affiliation grid-institutes:grid.6988.f
147 schema:familyName Slepchuk
148 schema:givenName N.
149 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07421013577.60
150 rdf:type schema:Person
151 sg:pub.10.1134/1.1188089 schema:sameAs https://app.dimensions.ai/details/publication/pub.1031320022
152 https://doi.org/10.1134/1.1188089
153 rdf:type schema:CreativeWork
154 sg:pub.10.1134/s1063782612040069 schema:sameAs https://app.dimensions.ai/details/publication/pub.1011303806
155 https://doi.org/10.1134/s1063782612040069
156 rdf:type schema:CreativeWork
157 sg:pub.10.1134/s106378261906006x schema:sameAs https://app.dimensions.ai/details/publication/pub.1117021758
158 https://doi.org/10.1134/s106378261906006x
159 rdf:type schema:CreativeWork
160 sg:pub.10.1134/s1063785019060117 schema:sameAs https://app.dimensions.ai/details/publication/pub.1118069872
161 https://doi.org/10.1134/s1063785019060117
162 rdf:type schema:CreativeWork
163 grid-institutes:grid.32495.39 schema:alternateName Peter the Great St. Petersburg Polytechnic University, 195021, St. Petersburg, Russia
164 schema:name Peter the Great St. Petersburg Polytechnic University, 195021, St. Petersburg, Russia
165 rdf:type schema:Organization
166 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
167 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
168 rdf:type schema:Organization
169 grid-institutes:grid.6988.f schema:alternateName Tallinn University of Technology, Tallinn, Estonia
170 schema:name Tallinn University of Technology, Tallinn, Estonia
171 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...