Quantum Yield of a Silicon XUV Avalanche Photodiode in the 320–1100 nm Wavelength Range View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-12

AUTHORS

V. V. Zabrodskii, P. N. Aruev, B. Ya. Ber, D. Yu. Kazantsev, A. N. Gorokhov, A. V. Nikolaev, V. V. Filimonov, M. Z. Shvarts, E. V. Sherstnev

ABSTRACT

Quantum photoresponse yield of a silicon XUV avalanche photodiode prototype with 1.5‑mm-diameter active region has been studied in the 320–1100 nm wavelength range. It is established that the proposed avalanche photodiode has the external quantum efficiency above 20 electron/photon in the 580–1000 nm range at a reverse bias voltage of 485 V. More... »

PAGES

1226-1229

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785019120289

DOI

http://dx.doi.org/10.1134/s1063785019120289

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1123990695


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