Anomalies in Photovoltaic Characteristics of Multijunction Solar Cells at Ultrahigh Solar Light Concentrations View Full Text


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Article Info

DATE

2019-11

AUTHORS

M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. Z. Shvarts, N. A. Kalyuzhnyy

ABSTRACT

An anomaly appearing in the photovoltaic characteristics of triple-junction GaInP/GaAs/Ge and of the corresponding double-junction GaInP/GaAs solar cells at ultrahigh concentrations (more than 2000 suns) of incident light has been studied. The light current–voltage characteristics at various concentration ratios of incident light and the dependence of the open-circuit voltage on the photogenerated current were analyzed. It was shown that the anomaly is observed due to the tunnel diode connected back-to-back between the GaInP and GaAs subcells. This diode absorbs photons that pass across the GaInP layers and creates a counter photovoltage. More... »

PAGES

1100-1102

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785019110099

DOI

http://dx.doi.org/10.1134/s1063785019110099

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1123447903


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mintairov", 
        "givenName": "M. A.", 
        "id": "sg:person.013224043671.45", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013224043671.45"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Evstropov", 
        "givenName": "V. V.", 
        "id": "sg:person.013245131377.70", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013245131377.70"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mintairov", 
        "givenName": "S. A.", 
        "id": "sg:person.07536566153.48", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07536566153.48"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shvarts", 
        "givenName": "M. Z.", 
        "id": "sg:person.016332220465.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016332220465.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kalyuzhnyy", 
        "givenName": "N. A.", 
        "id": "sg:person.014537453054.16", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014537453054.16"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2019-11", 
    "datePublishedReg": "2019-11-01", 
    "description": "An anomaly appearing in the photovoltaic characteristics of triple-junction GaInP/GaAs/Ge and\u00a0of the corresponding double-junction GaInP/GaAs solar cells at ultrahigh concentrations (more than 2000 suns) of incident light has been studied. The light current\u2013voltage characteristics at various concentration ratios of incident light and the dependence of the open-circuit voltage on the photogenerated current were analyzed. It was shown that the anomaly is observed due to the tunnel diode connected back-to-back between the GaInP and GaAs subcells. This diode absorbs photons that pass across the GaInP layers and creates a counter photovoltage.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063785019110099", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "11", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "45"
      }
    ], 
    "keywords": [
      "photovoltaic characteristics", 
      "solar cells", 
      "GaInP/GaAs/Ge", 
      "light current-voltage characteristics", 
      "GaAs solar cells", 
      "GaAs/Ge", 
      "multijunction solar cells", 
      "open-circuit voltage", 
      "current-voltage characteristics", 
      "incident light", 
      "tunnel diode", 
      "ultrahigh concentration", 
      "GaInP layers", 
      "light concentration", 
      "diodes", 
      "voltage", 
      "GaInP", 
      "GaAs", 
      "photovoltage", 
      "characteristics", 
      "layer", 
      "current", 
      "concentration ratio", 
      "Ge", 
      "ratio", 
      "concentration", 
      "dependence", 
      "light", 
      "back", 
      "cells", 
      "anomalies", 
      "photons"
    ], 
    "name": "Anomalies in Photovoltaic Characteristics of Multijunction Solar Cells at Ultrahigh Solar Light Concentrations", 
    "pagination": "1100-1102", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1123447903"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063785019110099"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063785019110099", 
      "https://app.dimensions.ai/details/publication/pub.1123447903"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:34", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_801.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063785019110099"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

114 TRIPLES      21 PREDICATES      57 URIs      50 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063785019110099 schema:about anzsrc-for:02
2 schema:author N23fecae59589484c98a192d87ed29bd5
3 schema:datePublished 2019-11
4 schema:datePublishedReg 2019-11-01
5 schema:description An anomaly appearing in the photovoltaic characteristics of triple-junction GaInP/GaAs/Ge and of the corresponding double-junction GaInP/GaAs solar cells at ultrahigh concentrations (more than 2000 suns) of incident light has been studied. The light current–voltage characteristics at various concentration ratios of incident light and the dependence of the open-circuit voltage on the photogenerated current were analyzed. It was shown that the anomaly is observed due to the tunnel diode connected back-to-back between the GaInP and GaAs subcells. This diode absorbs photons that pass across the GaInP layers and creates a counter photovoltage.
6 schema:genre article
7 schema:inLanguage en
8 schema:isAccessibleForFree false
9 schema:isPartOf N13366ca815af436c85e8f376e72f4c90
10 N66a77f69b06e49ea85212d7b6852a154
11 sg:journal.1136630
12 schema:keywords GaAs
13 GaAs solar cells
14 GaAs/Ge
15 GaInP
16 GaInP layers
17 GaInP/GaAs/Ge
18 Ge
19 anomalies
20 back
21 cells
22 characteristics
23 concentration
24 concentration ratio
25 current
26 current-voltage characteristics
27 dependence
28 diodes
29 incident light
30 layer
31 light
32 light concentration
33 light current-voltage characteristics
34 multijunction solar cells
35 open-circuit voltage
36 photons
37 photovoltage
38 photovoltaic characteristics
39 ratio
40 solar cells
41 tunnel diode
42 ultrahigh concentration
43 voltage
44 schema:name Anomalies in Photovoltaic Characteristics of Multijunction Solar Cells at Ultrahigh Solar Light Concentrations
45 schema:pagination 1100-1102
46 schema:productId Nd91f453b698f43d9a9abfa474b445baf
47 Nec9b63f0ec0f4445b32f3b1cd506b32a
48 schema:sameAs https://app.dimensions.ai/details/publication/pub.1123447903
49 https://doi.org/10.1134/s1063785019110099
50 schema:sdDatePublished 2022-05-20T07:34
51 schema:sdLicense https://scigraph.springernature.com/explorer/license/
52 schema:sdPublisher N6dcae306fff4493aa3b11813be553a0a
53 schema:url https://doi.org/10.1134/s1063785019110099
54 sgo:license sg:explorer/license/
55 sgo:sdDataset articles
56 rdf:type schema:ScholarlyArticle
57 N125c3b564c5542a9b88777a1d6ce047b rdf:first sg:person.014537453054.16
58 rdf:rest rdf:nil
59 N13366ca815af436c85e8f376e72f4c90 schema:issueNumber 11
60 rdf:type schema:PublicationIssue
61 N23fecae59589484c98a192d87ed29bd5 rdf:first sg:person.013224043671.45
62 rdf:rest Nc867fb772baa4f2faa35e9acf67b070b
63 N6293011a4ffc42d797d1af345ce04512 rdf:first sg:person.016332220465.73
64 rdf:rest N125c3b564c5542a9b88777a1d6ce047b
65 N66a77f69b06e49ea85212d7b6852a154 schema:volumeNumber 45
66 rdf:type schema:PublicationVolume
67 N6dcae306fff4493aa3b11813be553a0a schema:name Springer Nature - SN SciGraph project
68 rdf:type schema:Organization
69 N7b81d810913a4e59b4fa27b4890bac6e rdf:first sg:person.07536566153.48
70 rdf:rest N6293011a4ffc42d797d1af345ce04512
71 Nc867fb772baa4f2faa35e9acf67b070b rdf:first sg:person.013245131377.70
72 rdf:rest N7b81d810913a4e59b4fa27b4890bac6e
73 Nd91f453b698f43d9a9abfa474b445baf schema:name dimensions_id
74 schema:value pub.1123447903
75 rdf:type schema:PropertyValue
76 Nec9b63f0ec0f4445b32f3b1cd506b32a schema:name doi
77 schema:value 10.1134/s1063785019110099
78 rdf:type schema:PropertyValue
79 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
80 schema:name Physical Sciences
81 rdf:type schema:DefinedTerm
82 sg:journal.1136630 schema:issn 0320-0116
83 0360-120X
84 schema:name Technical Physics Letters
85 schema:publisher Pleiades Publishing
86 rdf:type schema:Periodical
87 sg:person.013224043671.45 schema:affiliation grid-institutes:grid.423485.c
88 schema:familyName Mintairov
89 schema:givenName M. A.
90 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013224043671.45
91 rdf:type schema:Person
92 sg:person.013245131377.70 schema:affiliation grid-institutes:grid.423485.c
93 schema:familyName Evstropov
94 schema:givenName V. V.
95 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013245131377.70
96 rdf:type schema:Person
97 sg:person.014537453054.16 schema:affiliation grid-institutes:grid.423485.c
98 schema:familyName Kalyuzhnyy
99 schema:givenName N. A.
100 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014537453054.16
101 rdf:type schema:Person
102 sg:person.016332220465.73 schema:affiliation grid-institutes:grid.423485.c
103 schema:familyName Shvarts
104 schema:givenName M. Z.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016332220465.73
106 rdf:type schema:Person
107 sg:person.07536566153.48 schema:affiliation grid-institutes:grid.423485.c
108 schema:familyName Mintairov
109 schema:givenName S. A.
110 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07536566153.48
111 rdf:type schema:Person
112 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
113 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
114 rdf:type schema:Organization
 




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