Ontology type: schema:ScholarlyArticle
2019-11
AUTHORSN. A. Maleev, A. P. Vasil’ev, A. G. Kuzmenkov, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, S. N. Maleev, V. A. Belyakov, E. V. Petryakova, Yu. P. Kudryashova, E. L. Fefelova, I. V. Makartsev, S. A. Blokhin, F. A. Ahmedov, A. V. Egorov, A. G. Fefelov, V. M. Ustinov
ABSTRACTA high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs with a T‑shaped gate 120 nm in length consist of four fingers, each 30 μm in width, exhibit a maximum transconductance of 810 mS/mm, 460-mA/mm maximum density of drain current and 8- to 10-V drain-to-gate breackdown voltage. The current-amplification cut-off frequency of transistors is over 115 GHz. Due to the enhanced breakdown voltage and the forming of a double recess structure by selective etching, the elaborated transistors are promising for application in the monolithic integrated circuits of the millimeter-wave medium power amplifiers. More... »
PAGES1092-1096
http://scigraph.springernature.com/pub.10.1134/s1063785019110075
DOIhttp://dx.doi.org/10.1134/s1063785019110075
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