InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-11

AUTHORS

N. A. Maleev, A. P. Vasil’ev, A. G. Kuzmenkov, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, S. N. Maleev, V. A. Belyakov, E. V. Petryakova, Yu. P. Kudryashova, E. L. Fefelova, I. V. Makartsev, S. A. Blokhin, F. A. Ahmedov, A. V. Egorov, A. G. Fefelov, V. M. Ustinov

ABSTRACT

A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs with a T‑shaped gate 120 nm in length consist of four fingers, each 30 μm in width, exhibit a maximum transconductance of 810 mS/mm, 460-mA/mm maximum density of drain current and 8- to 10-V drain-to-gate breackdown voltage. The current-amplification cut-off frequency of transistors is over 115 GHz. Due to the enhanced breakdown voltage and the forming of a double recess structure by selective etching, the elaborated transistors are promising for application in the monolithic integrated circuits of the millimeter-wave medium power amplifiers. More... »

PAGES

1092-1096

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785019110075

DOI

http://dx.doi.org/10.1134/s1063785019110075

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1123447901


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