Heterobarrier Varactors with Nonuniformly Doped Modulation Layers View Full Text


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Article Info

DATE

2019-10

AUTHORS

N. A. Maleev, M. A. Bobrov, A. G. Kuzmenkov, A. P. Vasil’ev, M. M. Kulagina, Yu. A. Guseva, S. A. Blokhin, V. M. Ustinov

ABSTRACT

Optimum shape of the capacitance–voltage (C–V) characteristic is a critical parameter determining the efficiency of frequency multiplication in heterobarrier varactors (HBVs) operating in the millimeter and submillimeter frequency ranges. A numerical model for calculating the C–V characteristics and leakage currents of HBV heterostructures with arbitrary composition and doping profiles has been verified on the basis of published and original experimental data. A specially designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded by nonuniformly doped n-InGaAs modulation layers has been grown by molecular beam epitaxy on InP substrate. Prototype HBVs manufactured using the proposed heterostructure demonstrated a nearly cosine shape of the C–V curve at bias voltages up to 2 V, increased overlap capacitance, and low leakage currents. More... »

PAGES

1063-1066

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785019100250

DOI

http://dx.doi.org/10.1134/s1063785019100250

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1122264241


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