Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-10

AUTHORS

G. S. Gagis, A. S. Vlasov, R. V. Levin, A. E. Marichev, M. P. Scheglov, T. B. Popova, B. Ya. Ber, D. Yu. Kazantsev, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil’ev

ABSTRACT

Luminescence properties of epilayers of Ga1 –xInxAsyP1 –y (GaInAsP) solid solutions with graded content of Group V elements (Δy up to 0.08 over a total thickness of about 1 μm) were studied at 77 and 300 K. The photoluminescence (PL) spectra of GaInAsP epilayers with large Δy values were broadened. The GaInAsP epilayers of low crystalline perfection exhibited either no PL emission or showed PL spectra characteristic of transitions involving impurity energy levels. More... »

PAGES

1031-1034

References to SciGraph publications

  • 2018-12. A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy in TECHNICAL PHYSICS LETTERS
  • <error retrieving object. in <ERROR RETRIEVING OBJECT
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1063785019100213

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    http://dx.doi.org/10.1134/s1063785019100213

    DIMENSIONS

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    167 rdf:type schema:Organization
     




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