Ontology type: schema:ScholarlyArticle
2019-08
AUTHORST. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu. Protasov, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, V. G. Mansurov, K. S. Zhuravlev
ABSTRACTIt is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes. More... »
PAGES761-764
http://scigraph.springernature.com/pub.10.1134/s1063785019080108
DOIhttp://dx.doi.org/10.1134/s1063785019080108
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