Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-08

AUTHORS

T. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu. Protasov, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, V. G. Mansurov, K. S. Zhuravlev

ABSTRACT

It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes. More... »

PAGES

761-764

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785019080108

DOI

http://dx.doi.org/10.1134/s1063785019080108

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1120849387


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170 grid-institutes:grid.436529.f schema:alternateName National Research University of Electronic Technology (MIET), 124498, ZelenogradMoscow, Russia
171 schema:name National Research University of Electronic Technology (MIET), 124498, ZelenogradMoscow, Russia
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173 grid-institutes:grid.4605.7 schema:alternateName Novosibirsk State University, 630090, Novosibirsk, Russia
174 schema:name Novosibirsk State University, 630090, Novosibirsk, Russia
175 Rzhanov Institute for Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia
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177 grid-institutes:grid.77667.37 schema:alternateName Novosibirsk State Technical University, 630087, Novosibirsk, Russia
178 schema:name Novosibirsk State Technical University, 630087, Novosibirsk, Russia
179 Rzhanov Institute for Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia
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