Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-08

AUTHORS

T. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu. Protasov, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, V. G. Mansurov, K. S. Zhuravlev

ABSTRACT

It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes. More... »

PAGES

761-764

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785019080108

DOI

http://dx.doi.org/10.1134/s1063785019080108

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1120849387


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