Temperature Dependence of the Parameters of 1.55-μm Semiconductor Lasers with Thin Quantum Wells Based on Phosphorus-Free Heterostructures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-06

AUTHORS

M. V. Maksimov, Yu. M. Shernyakov, F. I. Zubov, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, S. S. Rochas, E. S. Kolodeznyi, A. Yu. Egorov, A. E. Zhukov

ABSTRACT

InGaAs/InGaAlAs laser diodes operating in the 1.55-μm spectral range are studied. It is demonstrated that a certain level of carbon doping (1012 cm–2 per a single quantum well) allows one to reduce the temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic temperature of threshold current and differential efficiency at temperatures from 16 to ~50°C. These changes are accompanied by an increase in threshold current density and a reduction in differential efficiency. More... »

PAGES

549-552

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785019060129

DOI

http://dx.doi.org/10.1134/s1063785019060129

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1118069873


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