A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-12

AUTHORS

V. I. Vasil’ev, G. S. Gagis, R. V. Levin, A. E. Marichev, B. V. Pushnyi, M. P. Scheglov, V. I. Kuchinskii, B. Ya. Ber, D. Yu. Kazantsev, A. N. Gorokhov, T. B. Popova

ABSTRACT

Gradual variation of the content y of Group-V components by Δy of up to 0.08 across the thickness (600–850 nm) of an epitaxial layer has been observed for Ga1 – xInxAsyP1 – y solid solutions (x = 0.86, y = 0.07–0.42) produced on InP by metal-organic vapor-phase epitaxy under lowered pressure, although the composition of the gas mixture, temperature, and pressure were maintained invariable in the course of the growth process. For different gas mixture compositions, the value of Δy and the manner of its variation were different. An analysis of the data obtained demonstrated that Δy is due to the deformations that appear in a growing layer because of the lattice mismatch with the substrate. More... »

PAGES

1127-1129

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785018120593

DOI

http://dx.doi.org/10.1134/s1063785018120593

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112526970


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