Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current View Full Text


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Article Info

DATE

2018-10

AUTHORS

N. A. Maleev, M. A. Bobrov, A. G. Kuzmenkov, A. P. Vasil’ev, M. M. Kulagina, S. N. Maleev, S. A. Blokhin, V. N. Nevedomsky, V. M. Ustinov

ABSTRACT

The quality of heteroboundaries and optimal conditions for epitaxial growth are critical parameters for obtaining low leakage currents of heterobarrier varactors in the InGaAs/InAlAs/AlAs material system. Grown by molecular-beam epitaxy, three-barrier heterobarrier varactor structures adjacent to InAlAs/AlAs/InAlAs barrier layers by additional mismatched InGaAs layers subjected to compressive stress show, under optimal epitaxy conditions, extremely low levels of leakage current density (not more than 0.06 A/cm2 at a voltage of 5 V and 85°C) with relatively thin AlAs inserts (with a thickness of 2 nm). More... »

PAGES

862-864

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785018100103

DOI

http://dx.doi.org/10.1134/s1063785018100103

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1110670806


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