Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-07

AUTHORS

M. O. Petrushkov, M. A. Putyato, I. B. Chistokhin, B. R. Semyagin, E. A. Emel’yanov, M. Yu. Esin, T. A. Gavrilova, A. V. Vasev, V. V. Preobrazhenskii

ABSTRACT

An original technology of zinc diffusion into InP via a narrow gap is described, which allows reproducible formation of p–n junctions with preset depth of doping and retained surface morphology of the doped layers. Using the proposed method, desired charge carrier distribution profiles in Zn-doped InP layers were obtained. It has been experimentally confirmed that the method of cross-sectional scanning electron microscopy allows to precision measure of the zinc diffusion depth. More... »

PAGES

612-614

Journal

TITLE

Technical Physics Letters

ISSUE

7

VOLUME

44

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785018070258

DOI

http://dx.doi.org/10.1134/s1063785018070258

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1106190709


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