The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-07

AUTHORS

N. A. Sobolev, B. Ya. Ber, D. Yu. Kazantsev, A. E. Kalyadin, K. V. Karabeshkin, V. M. Mikoushkin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, E. V. Sherstnev, N. M. Shmidt

ABSTRACT

Secondary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the defect structure of epitaxial GaAs layers implanted with 250-keV N+ ions at doses of 5 × 1014–5 × 1016 cm–2. It was found that no amorphization of the layers being implanted occurs at doses exceeding the calculated amorphization threshold, a concentration of point defects that is formed is substantially lower than the calculated value, and a characteristic specific feature of the defect concentration profiles is the high defect concentration in the surface layer. More... »

PAGES

574-576

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785018070131

DOI

http://dx.doi.org/10.1134/s1063785018070131

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1106190698


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sobolev", 
        "givenName": "N. A.", 
        "id": "sg:person.01352375762.78", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01352375762.78"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ber", 
        "givenName": "B. Ya.", 
        "id": "sg:person.013474671571.59", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kazantsev", 
        "givenName": "D. Yu.", 
        "id": "sg:person.014463273123.71", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014463273123.71"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kalyadin", 
        "givenName": "A. E.", 
        "id": "sg:person.013640626615.85", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013640626615.85"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Karabeshkin", 
        "givenName": "K. V.", 
        "id": "sg:person.013144273062.43", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013144273062.43"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mikoushkin", 
        "givenName": "V. M.", 
        "id": "sg:person.011343023541.62", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011343023541.62"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sakharov", 
        "givenName": "V. I.", 
        "id": "sg:person.013230157623.40", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013230157623.40"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Serenkov", 
        "givenName": "I. T.", 
        "id": "sg:person.07670275153.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07670275153.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shek", 
        "givenName": "E. I.", 
        "id": "sg:person.012360567753.39", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012360567753.39"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sherstnev", 
        "givenName": "E. V.", 
        "id": "sg:person.013025161673.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013025161673.20"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shmidt", 
        "givenName": "N. M.", 
        "id": "sg:person.011531160044.65", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011531160044.65"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063784206120085", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1020278327", 
          "https://doi.org/10.1134/s1063784206120085"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1187742", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1037658611", 
          "https://doi.org/10.1134/1.1187742"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1412061", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1028457128", 
          "https://doi.org/10.1134/1.1412061"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782608070105", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1001871365", 
          "https://doi.org/10.1134/s1063782608070105"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-07", 
    "datePublishedReg": "2018-07-01", 
    "description": "Secondary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the defect structure of epitaxial GaAs layers implanted with 250-keV N+ ions at doses of 5 \u00d7 1014\u20135 \u00d7 1016 cm\u20132. It was found that no amorphization of the layers being implanted occurs at doses exceeding the calculated amorphization threshold, a concentration of point defects that is formed is substantially lower than the calculated value, and a characteristic specific feature of the defect concentration profiles is the high defect concentration in the surface layer.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063785018070131", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "7", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "44"
      }
    ], 
    "keywords": [
      "GaAs layers", 
      "point defects", 
      "nitrogen ion implantation", 
      "defect concentration profiles", 
      "secondary ion mass spectrometry", 
      "epitaxial GaAs layers", 
      "amorphization threshold", 
      "proton backscattering", 
      "high defect concentration", 
      "defect concentration", 
      "defect structure", 
      "concentration profiles", 
      "nitrogen atoms", 
      "surface layer", 
      "backscattering", 
      "layer", 
      "atoms", 
      "amorphization", 
      "ions", 
      "specific features", 
      "defects", 
      "mass spectrometry", 
      "threshold", 
      "profile", 
      "structure", 
      "implantation", 
      "spectrometry", 
      "occurs", 
      "features", 
      "values", 
      "effect", 
      "concentration", 
      "effect of dose", 
      "doses", 
      "dose"
    ], 
    "name": "The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers", 
    "pagination": "574-576", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1106190698"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063785018070131"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063785018070131", 
      "https://app.dimensions.ai/details/publication/pub.1106190698"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:34", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_763.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063785018070131"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063785018070131'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063785018070131'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063785018070131'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063785018070131'


 

This table displays all metadata directly associated to this object as RDF triples.

175 TRIPLES      22 PREDICATES      64 URIs      53 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063785018070131 schema:about anzsrc-for:02
2 schema:author Neea402d4c84449f4ab885c076b39a8a7
3 schema:citation sg:pub.10.1134/1.1187742
4 sg:pub.10.1134/1.1412061
5 sg:pub.10.1134/s1063782608070105
6 sg:pub.10.1134/s1063784206120085
7 schema:datePublished 2018-07
8 schema:datePublishedReg 2018-07-01
9 schema:description Secondary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the defect structure of epitaxial GaAs layers implanted with 250-keV N+ ions at doses of 5 × 1014–5 × 1016 cm–2. It was found that no amorphization of the layers being implanted occurs at doses exceeding the calculated amorphization threshold, a concentration of point defects that is formed is substantially lower than the calculated value, and a characteristic specific feature of the defect concentration profiles is the high defect concentration in the surface layer.
10 schema:genre article
11 schema:inLanguage en
12 schema:isAccessibleForFree false
13 schema:isPartOf N2aa1210e463247f6b1be5c8f44594530
14 Nd403002566cf4451844455b4167d978f
15 sg:journal.1136630
16 schema:keywords GaAs layers
17 amorphization
18 amorphization threshold
19 atoms
20 backscattering
21 concentration
22 concentration profiles
23 defect concentration
24 defect concentration profiles
25 defect structure
26 defects
27 dose
28 doses
29 effect
30 effect of dose
31 epitaxial GaAs layers
32 features
33 high defect concentration
34 implantation
35 ions
36 layer
37 mass spectrometry
38 nitrogen atoms
39 nitrogen ion implantation
40 occurs
41 point defects
42 profile
43 proton backscattering
44 secondary ion mass spectrometry
45 specific features
46 spectrometry
47 structure
48 surface layer
49 threshold
50 values
51 schema:name The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers
52 schema:pagination 574-576
53 schema:productId N1bad2357b4bd443aae3d4b9cdb69b064
54 N2f4d904fc7834e06afd16e116773cd68
55 schema:sameAs https://app.dimensions.ai/details/publication/pub.1106190698
56 https://doi.org/10.1134/s1063785018070131
57 schema:sdDatePublished 2022-05-20T07:34
58 schema:sdLicense https://scigraph.springernature.com/explorer/license/
59 schema:sdPublisher N6d7c1aa2d8f54372a91e6c7159d21430
60 schema:url https://doi.org/10.1134/s1063785018070131
61 sgo:license sg:explorer/license/
62 sgo:sdDataset articles
63 rdf:type schema:ScholarlyArticle
64 N048bde80de6448f6b6d8d463f3aebdb1 rdf:first sg:person.014463273123.71
65 rdf:rest Nee89b4b7cf5e4f8bb5c6644d2bb85f06
66 N173f2ea8a63b47538ad00f0d5f4354b7 rdf:first sg:person.013025161673.20
67 rdf:rest N7cd3a9693fb5483cb8d2b43f994379cb
68 N1bad2357b4bd443aae3d4b9cdb69b064 schema:name dimensions_id
69 schema:value pub.1106190698
70 rdf:type schema:PropertyValue
71 N2aa1210e463247f6b1be5c8f44594530 schema:issueNumber 7
72 rdf:type schema:PublicationIssue
73 N2f4d904fc7834e06afd16e116773cd68 schema:name doi
74 schema:value 10.1134/s1063785018070131
75 rdf:type schema:PropertyValue
76 N343daeaa1a354ac1a4de1390b866c4bd rdf:first sg:person.012360567753.39
77 rdf:rest N173f2ea8a63b47538ad00f0d5f4354b7
78 N6d7c1aa2d8f54372a91e6c7159d21430 schema:name Springer Nature - SN SciGraph project
79 rdf:type schema:Organization
80 N7cd3a9693fb5483cb8d2b43f994379cb rdf:first sg:person.011531160044.65
81 rdf:rest rdf:nil
82 Na29a46686ce74624aaf13f44c3854cf7 rdf:first sg:person.011343023541.62
83 rdf:rest Nbf4b9a550f344c438dcd41fbced40a39
84 Nbf4b9a550f344c438dcd41fbced40a39 rdf:first sg:person.013230157623.40
85 rdf:rest Ne8d80bae312c488b988d6b2526e1aadd
86 Ncdae8f74d9624447a3cf9e8f056c35a7 rdf:first sg:person.013144273062.43
87 rdf:rest Na29a46686ce74624aaf13f44c3854cf7
88 Nd403002566cf4451844455b4167d978f schema:volumeNumber 44
89 rdf:type schema:PublicationVolume
90 Nddf3fbbce1a14282af2584c69e8f51f4 rdf:first sg:person.013474671571.59
91 rdf:rest N048bde80de6448f6b6d8d463f3aebdb1
92 Ne8d80bae312c488b988d6b2526e1aadd rdf:first sg:person.07670275153.53
93 rdf:rest N343daeaa1a354ac1a4de1390b866c4bd
94 Nee89b4b7cf5e4f8bb5c6644d2bb85f06 rdf:first sg:person.013640626615.85
95 rdf:rest Ncdae8f74d9624447a3cf9e8f056c35a7
96 Neea402d4c84449f4ab885c076b39a8a7 rdf:first sg:person.01352375762.78
97 rdf:rest Nddf3fbbce1a14282af2584c69e8f51f4
98 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
99 schema:name Physical Sciences
100 rdf:type schema:DefinedTerm
101 sg:journal.1136630 schema:issn 0320-0116
102 0360-120X
103 schema:name Technical Physics Letters
104 schema:publisher Pleiades Publishing
105 rdf:type schema:Periodical
106 sg:person.011343023541.62 schema:affiliation grid-institutes:grid.423485.c
107 schema:familyName Mikoushkin
108 schema:givenName V. M.
109 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011343023541.62
110 rdf:type schema:Person
111 sg:person.011531160044.65 schema:affiliation grid-institutes:grid.423485.c
112 schema:familyName Shmidt
113 schema:givenName N. M.
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011531160044.65
115 rdf:type schema:Person
116 sg:person.012360567753.39 schema:affiliation grid-institutes:grid.423485.c
117 schema:familyName Shek
118 schema:givenName E. I.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012360567753.39
120 rdf:type schema:Person
121 sg:person.013025161673.20 schema:affiliation grid-institutes:grid.423485.c
122 schema:familyName Sherstnev
123 schema:givenName E. V.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013025161673.20
125 rdf:type schema:Person
126 sg:person.013144273062.43 schema:affiliation grid-institutes:grid.423485.c
127 schema:familyName Karabeshkin
128 schema:givenName K. V.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013144273062.43
130 rdf:type schema:Person
131 sg:person.013230157623.40 schema:affiliation grid-institutes:grid.423485.c
132 schema:familyName Sakharov
133 schema:givenName V. I.
134 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013230157623.40
135 rdf:type schema:Person
136 sg:person.013474671571.59 schema:affiliation grid-institutes:grid.423485.c
137 schema:familyName Ber
138 schema:givenName B. Ya.
139 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59
140 rdf:type schema:Person
141 sg:person.01352375762.78 schema:affiliation grid-institutes:grid.423485.c
142 schema:familyName Sobolev
143 schema:givenName N. A.
144 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01352375762.78
145 rdf:type schema:Person
146 sg:person.013640626615.85 schema:affiliation grid-institutes:grid.423485.c
147 schema:familyName Kalyadin
148 schema:givenName A. E.
149 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013640626615.85
150 rdf:type schema:Person
151 sg:person.014463273123.71 schema:affiliation grid-institutes:grid.423485.c
152 schema:familyName Kazantsev
153 schema:givenName D. Yu.
154 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014463273123.71
155 rdf:type schema:Person
156 sg:person.07670275153.53 schema:affiliation grid-institutes:grid.423485.c
157 schema:familyName Serenkov
158 schema:givenName I. T.
159 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07670275153.53
160 rdf:type schema:Person
161 sg:pub.10.1134/1.1187742 schema:sameAs https://app.dimensions.ai/details/publication/pub.1037658611
162 https://doi.org/10.1134/1.1187742
163 rdf:type schema:CreativeWork
164 sg:pub.10.1134/1.1412061 schema:sameAs https://app.dimensions.ai/details/publication/pub.1028457128
165 https://doi.org/10.1134/1.1412061
166 rdf:type schema:CreativeWork
167 sg:pub.10.1134/s1063782608070105 schema:sameAs https://app.dimensions.ai/details/publication/pub.1001871365
168 https://doi.org/10.1134/s1063782608070105
169 rdf:type schema:CreativeWork
170 sg:pub.10.1134/s1063784206120085 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020278327
171 https://doi.org/10.1134/s1063784206120085
172 rdf:type schema:CreativeWork
173 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
174 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
175 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...