Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-02

AUTHORS

R. R. Reznik, G. E. Cirlin, I. V. Shtrom, A. I. Khrebtov, I. P. Soshnikov, N. V. Kryzhanovskaya, E. I. Moiseev, A. E. Zhukov

ABSTRACT

Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of ~1.3 μm at room temperature. More... »

PAGES

112-114

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785018020116

DOI

http://dx.doi.org/10.1134/s1063785018020116

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1101889662


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