4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-02

AUTHORS

P. A. Ivanov, O. I. Kon’kov, T. P. Samsonova, A. S. Potapov

ABSTRACT

High-voltage (1600 V) diodes based on epitaxial 4H-SiC p++–p+–n0–n+ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4H-SiC of p type is experimentally estimated for the first time: vsp = 3 × 106 cm/s. More... »

PAGES

87-89

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785018020086

DOI

http://dx.doi.org/10.1134/s1063785018020086

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1101893468


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ivanov", 
        "givenName": "P. A.", 
        "id": "sg:person.010230425734.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kon\u2019kov", 
        "givenName": "O. I.", 
        "id": "sg:person.012364253231.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012364253231.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Samsonova", 
        "givenName": "T. P.", 
        "id": "sg:person.010276541134.45", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010276541134.45"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Potapov", 
        "givenName": "A. S.", 
        "id": "sg:person.07607603250.04", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07607603250.04"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/1.1610132", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048436237", 
          "https://doi.org/10.1134/1.1610132"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782615110093", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1017409164", 
          "https://doi.org/10.1134/s1063782615110093"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1498779", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021602209", 
          "https://doi.org/10.1134/1.1498779"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063785014040166", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006971237", 
          "https://doi.org/10.1134/s1063785014040166"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063785016010090", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019669254", 
          "https://doi.org/10.1134/s1063785016010090"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063785015040045", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1004697689", 
          "https://doi.org/10.1134/s1063785015040045"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-02", 
    "datePublishedReg": "2018-02-01", 
    "description": "High-voltage (1600 V) diodes based on epitaxial 4H-SiC p++\u2013p+\u2013n0\u2013n+ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4H-SiC of p type is experimentally estimated for the first time: vsp = 3 \u00d7 106 cm/s.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063785018020086", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "2", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "44"
      }
    ], 
    "keywords": [
      "current breaker", 
      "epitaxial 4H-SiC", 
      "record short time", 
      "breaker", 
      "hole drift velocity", 
      "circuit", 
      "short time", 
      "velocity", 
      "first time", 
      "VSP", 
      "time", 
      "structure", 
      "High", 
      "types", 
      "N0"
    ], 
    "name": "4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers", 
    "pagination": "87-89", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1101893468"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063785018020086"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063785018020086", 
      "https://app.dimensions.ai/details/publication/pub.1101893468"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-06-01T22:19", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220601/entities/gbq_results/article/article_775.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063785018020086"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063785018020086'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063785018020086'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063785018020086'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063785018020086'


 

This table displays all metadata directly associated to this object as RDF triples.

114 TRIPLES      22 PREDICATES      46 URIs      33 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063785018020086 schema:about anzsrc-for:02
2 schema:author Nc6fdbae643a84df5bcc3e1c013f700d5
3 schema:citation sg:pub.10.1134/1.1498779
4 sg:pub.10.1134/1.1610132
5 sg:pub.10.1134/s1063782615110093
6 sg:pub.10.1134/s1063785014040166
7 sg:pub.10.1134/s1063785015040045
8 sg:pub.10.1134/s1063785016010090
9 schema:datePublished 2018-02
10 schema:datePublishedReg 2018-02-01
11 schema:description High-voltage (1600 V) diodes based on epitaxial 4H-SiC p++–p+–n0–n+ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4H-SiC of p type is experimentally estimated for the first time: vsp = 3 × 106 cm/s.
12 schema:genre article
13 schema:inLanguage en
14 schema:isAccessibleForFree false
15 schema:isPartOf N51a25746d53e427890268fc6c7d7b5b5
16 N664a2ce09d964d9db16ff5c87142d025
17 sg:journal.1136630
18 schema:keywords High
19 N0
20 VSP
21 breaker
22 circuit
23 current breaker
24 epitaxial 4H-SiC
25 first time
26 hole drift velocity
27 record short time
28 short time
29 structure
30 time
31 types
32 velocity
33 schema:name 4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers
34 schema:pagination 87-89
35 schema:productId N54f6e9d34cee425489edf5f490bd41e2
36 N7e7d950387fa454ab9420f29bfbb55dc
37 schema:sameAs https://app.dimensions.ai/details/publication/pub.1101893468
38 https://doi.org/10.1134/s1063785018020086
39 schema:sdDatePublished 2022-06-01T22:19
40 schema:sdLicense https://scigraph.springernature.com/explorer/license/
41 schema:sdPublisher N60617db954fc4afbaf51f6b224863a4c
42 schema:url https://doi.org/10.1134/s1063785018020086
43 sgo:license sg:explorer/license/
44 sgo:sdDataset articles
45 rdf:type schema:ScholarlyArticle
46 N4eb0e81b53ec4d248c83e039cd8b3e3a rdf:first sg:person.010276541134.45
47 rdf:rest N8e0cb82fb2014ee98013ea2fb7fac921
48 N51a25746d53e427890268fc6c7d7b5b5 schema:volumeNumber 44
49 rdf:type schema:PublicationVolume
50 N54f6e9d34cee425489edf5f490bd41e2 schema:name dimensions_id
51 schema:value pub.1101893468
52 rdf:type schema:PropertyValue
53 N60617db954fc4afbaf51f6b224863a4c schema:name Springer Nature - SN SciGraph project
54 rdf:type schema:Organization
55 N664a2ce09d964d9db16ff5c87142d025 schema:issueNumber 2
56 rdf:type schema:PublicationIssue
57 N7e7d950387fa454ab9420f29bfbb55dc schema:name doi
58 schema:value 10.1134/s1063785018020086
59 rdf:type schema:PropertyValue
60 N8e0cb82fb2014ee98013ea2fb7fac921 rdf:first sg:person.07607603250.04
61 rdf:rest rdf:nil
62 Nba497d941af54b0d9c2028af6e6ec53f rdf:first sg:person.012364253231.30
63 rdf:rest N4eb0e81b53ec4d248c83e039cd8b3e3a
64 Nc6fdbae643a84df5bcc3e1c013f700d5 rdf:first sg:person.010230425734.18
65 rdf:rest Nba497d941af54b0d9c2028af6e6ec53f
66 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
67 schema:name Physical Sciences
68 rdf:type schema:DefinedTerm
69 sg:journal.1136630 schema:issn 0320-0116
70 0360-120X
71 schema:name Technical Physics Letters
72 schema:publisher Pleiades Publishing
73 rdf:type schema:Periodical
74 sg:person.010230425734.18 schema:affiliation grid-institutes:grid.423485.c
75 schema:familyName Ivanov
76 schema:givenName P. A.
77 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18
78 rdf:type schema:Person
79 sg:person.010276541134.45 schema:affiliation grid-institutes:grid.423485.c
80 schema:familyName Samsonova
81 schema:givenName T. P.
82 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010276541134.45
83 rdf:type schema:Person
84 sg:person.012364253231.30 schema:affiliation grid-institutes:grid.423485.c
85 schema:familyName Kon’kov
86 schema:givenName O. I.
87 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012364253231.30
88 rdf:type schema:Person
89 sg:person.07607603250.04 schema:affiliation grid-institutes:grid.423485.c
90 schema:familyName Potapov
91 schema:givenName A. S.
92 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07607603250.04
93 rdf:type schema:Person
94 sg:pub.10.1134/1.1498779 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021602209
95 https://doi.org/10.1134/1.1498779
96 rdf:type schema:CreativeWork
97 sg:pub.10.1134/1.1610132 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048436237
98 https://doi.org/10.1134/1.1610132
99 rdf:type schema:CreativeWork
100 sg:pub.10.1134/s1063782615110093 schema:sameAs https://app.dimensions.ai/details/publication/pub.1017409164
101 https://doi.org/10.1134/s1063782615110093
102 rdf:type schema:CreativeWork
103 sg:pub.10.1134/s1063785014040166 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006971237
104 https://doi.org/10.1134/s1063785014040166
105 rdf:type schema:CreativeWork
106 sg:pub.10.1134/s1063785015040045 schema:sameAs https://app.dimensions.ai/details/publication/pub.1004697689
107 https://doi.org/10.1134/s1063785015040045
108 rdf:type schema:CreativeWork
109 sg:pub.10.1134/s1063785016010090 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019669254
110 https://doi.org/10.1134/s1063785016010090
111 rdf:type schema:CreativeWork
112 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia
113 schema:name Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia
114 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...