The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam ... View Full Text


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Article Info

DATE

2017-11

AUTHORS

K. Yu. Shubina, T. N. Berezovskaya, D. V. Mokhov, A. M. Mizerov, E. V. Nikitina

ABSTRACT

The dependence of the crystallographic polarity of GaN epitaxial layers produced by nitrogen plasma-enhanced molecular-beam epitaxy on Si(111) substrates on the nitridation parameters and initial growth conditions has been studied. A rapid procedure for determining the polarity of GaN epitaxial layers was developed. It was found experimentally that the nitridation parameters of the silicon substrate have no effect on the polarity of a GaN layer. It was shown that the substrate temperature in the stage of nucleation of a GaN epitaxial layer is one of the factors determining its polarity. More... »

PAGES

976-978

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785017110116

DOI

http://dx.doi.org/10.1134/s1063785017110116

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1093127495


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