A study of the effect of random dopant-concentration fluctuations on current in semiconductor superlattices View Full Text


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Article Info

DATE

2017-10

AUTHORS

A. O. Sel’skii, A. A. Koronovskii, O. I. Moskalenko, A. E. Hramov

ABSTRACT

The influence exerted by random dopant-concentration fluctuations on the current–voltage characteristics of the current flowing through a semiconductor superlattice has been studied. It was shown that the characteristics of the current flowing through the superlattice noticeably vary with the amplitude of fluctuations of nanostructure parameters. It was possible to find for a small sample the probability-density distribution of the integrated absolute values of the difference of currents at various amplitudes of the dopantconcentration fluctuations. More... »

PAGES

912-915

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378501710025x

DOI

http://dx.doi.org/10.1134/s106378501710025x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1092539174


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