A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-10

AUTHORS

V. I. Vasil’ev, G. S. Gagis, R. V. Levin, V. I. Kuchinskii, A. G. Deryagin, D. Yu. Kazantsev, B. Ya. Ber

ABSTRACT

A study by secondary-ion mass spectrometry of InAsxPySb1–x–y/InAs heterostructures (x > 0.55) grown by vapor-phase epitaxy for lattice-mismatched with substrates samples revealed a noticeable and extended (~800 nm) exponential variation of the As and P content (y up to 0.12) across the layer thickness. The lattice mismatch calculated from the experimentally determined distribution of the As and P components was the strongest at the interface between the epitaxial layer and the substrate and decreased away from the heterointerface into the epitaxial layer. More... »

PAGES

905-908

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785017100121

DOI

http://dx.doi.org/10.1134/s1063785017100121

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1092539162


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vasil\u2019ev", 
        "givenName": "V. I.", 
        "id": "sg:person.016116776273.31", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016116776273.31"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gagis", 
        "givenName": "G. S.", 
        "id": "sg:person.012115013645.83", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012115013645.83"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Levin", 
        "givenName": "R. V.", 
        "id": "sg:person.014646260517.27", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014646260517.27"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kuchinskii", 
        "givenName": "V. I.", 
        "id": "sg:person.010076573456.26", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010076573456.26"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Deryagin", 
        "givenName": "A. G.", 
        "id": "sg:person.010364611625.39", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010364611625.39"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kazantsev", 
        "givenName": "D. Yu.", 
        "id": "sg:person.014463273123.71", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014463273123.71"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ber", 
        "givenName": "B. Ya.", 
        "id": "sg:person.013474671571.59", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782614060220", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1035850049", 
          "https://doi.org/10.1134/s1063782614060220"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782617020269", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1083760505", 
          "https://doi.org/10.1134/s1063782617020269"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063785012050148", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1024647667", 
          "https://doi.org/10.1134/s1063785012050148"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2017-10", 
    "datePublishedReg": "2017-10-01", 
    "description": "A study by secondary-ion mass spectrometry of InAsxPySb1\u2013x\u2013y/InAs heterostructures (x > 0.55) grown by vapor-phase epitaxy for lattice-mismatched with substrates samples revealed a noticeable and extended (~800 nm) exponential variation of the As and P content (y up to 0.12) across the layer thickness. The lattice mismatch calculated from the experimentally determined distribution of the As and P components was the strongest at the interface between the epitaxial layer and the substrate and decreased away from the heterointerface into the epitaxial layer.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063785017100121", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "10", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "43"
      }
    ], 
    "keywords": [
      "epitaxial layers", 
      "vapor phase epitaxy", 
      "layer thickness", 
      "secondary ion mass spectrometry", 
      "lattice mismatch", 
      "exponential variation", 
      "substrate samples", 
      "transition region", 
      "layer", 
      "epitaxy", 
      "heterointerface", 
      "MOVPE", 
      "InAs", 
      "thickness", 
      "interface", 
      "substrate", 
      "mismatch", 
      "distribution", 
      "components", 
      "content", 
      "variation", 
      "samples", 
      "AS", 
      "study", 
      "region", 
      "spectrometry", 
      "mass spectrometry"
    ], 
    "name": "A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE", 
    "pagination": "905-908", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1092539162"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063785017100121"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063785017100121", 
      "https://app.dimensions.ai/details/publication/pub.1092539162"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:34", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_752.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063785017100121"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063785017100121'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063785017100121'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063785017100121'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063785017100121'


 

This table displays all metadata directly associated to this object as RDF triples.

135 TRIPLES      22 PREDICATES      55 URIs      45 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063785017100121 schema:about anzsrc-for:02
2 schema:author N1c6d0f24312a4ea1b7b490e34cdaf419
3 schema:citation sg:pub.10.1134/s1063782614060220
4 sg:pub.10.1134/s1063782617020269
5 sg:pub.10.1134/s1063785012050148
6 schema:datePublished 2017-10
7 schema:datePublishedReg 2017-10-01
8 schema:description A study by secondary-ion mass spectrometry of InAsxPySb1–x–y/InAs heterostructures (x > 0.55) grown by vapor-phase epitaxy for lattice-mismatched with substrates samples revealed a noticeable and extended (~800 nm) exponential variation of the As and P content (y up to 0.12) across the layer thickness. The lattice mismatch calculated from the experimentally determined distribution of the As and P components was the strongest at the interface between the epitaxial layer and the substrate and decreased away from the heterointerface into the epitaxial layer.
9 schema:genre article
10 schema:inLanguage en
11 schema:isAccessibleForFree false
12 schema:isPartOf N52529ee443024252b55a8afa2d860df1
13 N52582ab934d34b8da66f00908e66c01d
14 sg:journal.1136630
15 schema:keywords AS
16 InAs
17 MOVPE
18 components
19 content
20 distribution
21 epitaxial layers
22 epitaxy
23 exponential variation
24 heterointerface
25 interface
26 lattice mismatch
27 layer
28 layer thickness
29 mass spectrometry
30 mismatch
31 region
32 samples
33 secondary ion mass spectrometry
34 spectrometry
35 study
36 substrate
37 substrate samples
38 thickness
39 transition region
40 vapor phase epitaxy
41 variation
42 schema:name A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE
43 schema:pagination 905-908
44 schema:productId N367fa804726c4ccbb9697db26467d109
45 Nf65045a9b2554abf8c7bd6cee29a79ec
46 schema:sameAs https://app.dimensions.ai/details/publication/pub.1092539162
47 https://doi.org/10.1134/s1063785017100121
48 schema:sdDatePublished 2022-05-20T07:34
49 schema:sdLicense https://scigraph.springernature.com/explorer/license/
50 schema:sdPublisher N6f7967a6430b422583c5bac5d10b7a8d
51 schema:url https://doi.org/10.1134/s1063785017100121
52 sgo:license sg:explorer/license/
53 sgo:sdDataset articles
54 rdf:type schema:ScholarlyArticle
55 N1c6d0f24312a4ea1b7b490e34cdaf419 rdf:first sg:person.016116776273.31
56 rdf:rest Nefb0d8ea3d224b27807ca5ff41e30703
57 N367fa804726c4ccbb9697db26467d109 schema:name doi
58 schema:value 10.1134/s1063785017100121
59 rdf:type schema:PropertyValue
60 N3bab2d142c6140fb81071d6a4140f790 rdf:first sg:person.014463273123.71
61 rdf:rest N805b3d3b97964d67a2accd12ae061b97
62 N52529ee443024252b55a8afa2d860df1 schema:issueNumber 10
63 rdf:type schema:PublicationIssue
64 N52582ab934d34b8da66f00908e66c01d schema:volumeNumber 43
65 rdf:type schema:PublicationVolume
66 N6f7967a6430b422583c5bac5d10b7a8d schema:name Springer Nature - SN SciGraph project
67 rdf:type schema:Organization
68 N70213c71246846f0b0478d2c767ea1b4 rdf:first sg:person.014646260517.27
69 rdf:rest Nc83d73be976443038a989537bbfe3a83
70 N805b3d3b97964d67a2accd12ae061b97 rdf:first sg:person.013474671571.59
71 rdf:rest rdf:nil
72 Nc83d73be976443038a989537bbfe3a83 rdf:first sg:person.010076573456.26
73 rdf:rest Ncb78096cd92a409abbbe4b226ee7eb36
74 Ncb78096cd92a409abbbe4b226ee7eb36 rdf:first sg:person.010364611625.39
75 rdf:rest N3bab2d142c6140fb81071d6a4140f790
76 Nefb0d8ea3d224b27807ca5ff41e30703 rdf:first sg:person.012115013645.83
77 rdf:rest N70213c71246846f0b0478d2c767ea1b4
78 Nf65045a9b2554abf8c7bd6cee29a79ec schema:name dimensions_id
79 schema:value pub.1092539162
80 rdf:type schema:PropertyValue
81 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
82 schema:name Physical Sciences
83 rdf:type schema:DefinedTerm
84 sg:journal.1136630 schema:issn 0320-0116
85 0360-120X
86 schema:name Technical Physics Letters
87 schema:publisher Pleiades Publishing
88 rdf:type schema:Periodical
89 sg:person.010076573456.26 schema:affiliation grid-institutes:grid.423485.c
90 schema:familyName Kuchinskii
91 schema:givenName V. I.
92 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010076573456.26
93 rdf:type schema:Person
94 sg:person.010364611625.39 schema:affiliation grid-institutes:grid.423485.c
95 schema:familyName Deryagin
96 schema:givenName A. G.
97 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010364611625.39
98 rdf:type schema:Person
99 sg:person.012115013645.83 schema:affiliation grid-institutes:grid.423485.c
100 schema:familyName Gagis
101 schema:givenName G. S.
102 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012115013645.83
103 rdf:type schema:Person
104 sg:person.013474671571.59 schema:affiliation grid-institutes:grid.423485.c
105 schema:familyName Ber
106 schema:givenName B. Ya.
107 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59
108 rdf:type schema:Person
109 sg:person.014463273123.71 schema:affiliation grid-institutes:grid.423485.c
110 schema:familyName Kazantsev
111 schema:givenName D. Yu.
112 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014463273123.71
113 rdf:type schema:Person
114 sg:person.014646260517.27 schema:affiliation grid-institutes:grid.423485.c
115 schema:familyName Levin
116 schema:givenName R. V.
117 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014646260517.27
118 rdf:type schema:Person
119 sg:person.016116776273.31 schema:affiliation grid-institutes:grid.423485.c
120 schema:familyName Vasil’ev
121 schema:givenName V. I.
122 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016116776273.31
123 rdf:type schema:Person
124 sg:pub.10.1134/s1063782614060220 schema:sameAs https://app.dimensions.ai/details/publication/pub.1035850049
125 https://doi.org/10.1134/s1063782614060220
126 rdf:type schema:CreativeWork
127 sg:pub.10.1134/s1063782617020269 schema:sameAs https://app.dimensions.ai/details/publication/pub.1083760505
128 https://doi.org/10.1134/s1063782617020269
129 rdf:type schema:CreativeWork
130 sg:pub.10.1134/s1063785012050148 schema:sameAs https://app.dimensions.ai/details/publication/pub.1024647667
131 https://doi.org/10.1134/s1063785012050148
132 rdf:type schema:CreativeWork
133 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
134 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
135 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...