Precision calibration of the silicon doping level in gallium arsenide epitaxial layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-10

AUTHORS

D. V. Mokhov, T. N. Berezovskaya, A. G. Kuzmenkov, N. A. Maleev, S. N. Timoshnev, V. M. Ustinov

ABSTRACT

An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%. More... »

PAGES

909-911

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785017100091

DOI

http://dx.doi.org/10.1134/s1063785017100091

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1092539159


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