Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-09

AUTHORS

S. P. Lebedev, I. A. Eliseyev, V. Yu. Davydov, A. N. Smirnov, V. S. Levitskii, M. G. Mynbaeva, M. M. Kulagina, B. Hähnlein, J. Pezoldt, A. A. Lebedev

ABSTRACT

We present the results of investigations of the transport properties of graphene films obtained by thermodestruction of a 4H-SiC (0001) surface in argon. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons approached 6000 cm2/(V · s). The achieved parameters of mobility are close to theoretical values calculated for graphene films with intrinsic conductivity on the Si face of SiC at Т = 300 К in the absence of intercalated hydrogen. More... »

PAGES

849-852

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378501709022x

DOI

http://dx.doi.org/10.1134/s106378501709022x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1092230639


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