Directional emission from beryllium doped GaAs/AlGaAs nanowires View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-09

AUTHORS

V. G. Talalaev, I. V. Shtrom, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravleuv, G. E. Cirlin

ABSTRACT

The emission directionality of self-catalytic GaAs nanowires in an AlGaAs shell, produced by molecular-beam epitaxy with a varied level of beryllium doping, is studied. It is shown that an undoped sample possesses pronounced waveguide properties along the growth direction. With increasing doping level, the intensity of the emission directed perpendicular to the lateral nanowire walls grows. More... »

PAGES

811-813

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785017090085

DOI

http://dx.doi.org/10.1134/s1063785017090085

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1092227814


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