Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-05

AUTHORS

D. V. Nechaev, A. A. Sitnikova, P. N. Brunkov, S. V. Ivanov, V. N. Jmerik

ABSTRACT

In situ stress generation and relaxation in Al0.25Ga0.75N/GaN/AlN heterostructure with an overall thickness exceeding 3 μm in the process of its growth on a 6H-SiC substrate by low-temperature plasma-assisted molecular-beam epitaxy at substrate temperatures ranging from 690 to 740°C was studied. At room temperature, AlN and GaN layers revealed residual compressive stresses of–2.3 and–0.1 GPa, respectively. This made it possible to avoid cracking during postgrowth cooling of the structure. More... »

PAGES

443-446

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378501705008x

DOI

http://dx.doi.org/10.1134/s106378501705008x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1086042770


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