Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-03

AUTHORS

D. S. Zolotukhin, D. V. Nechaev, S. V. Ivanov, V. N. Zhmerik

ABSTRACT

An original optical system for measuring substrate curvature (OSMSC) is described. The system enables a high-precision analysis of the processes of generation and relaxation of elastic stresses in growth of heterostructures (HSs) based on nitride compounds III-N by plasma-assisted molecular-beam epitaxy (PA-MBE). The application of OSMSC to analyze the growth of GaN/AlN/Si(111) HSs made it possible not only to observe in detail the variation dynamics of elastic stresses in this structure in its metal-enriched growth by low-temperature PA-MBE, but also to develop an HS design eliminating the effect of layer cracking by controlling the compressive stresses. More... »

PAGES

262-266

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785017030130

DOI

http://dx.doi.org/10.1134/s1063785017030130

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1084862268


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