Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-11

AUTHORS

V. V. Emtsev, E. E. Zavarin, M. A. Kozlovskii, M. F. Kudoyarov, V. V. Lundin, G. A. Oganesyan, V. N. Petrov, D. S. Poloskin, A. V. Sakharov, S. I. Troshkov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, V. V. Kozlovskii

ABSTRACT

It has been shown that the interaction of 1 MeV protons at doses of (0.5–2) × 1014 cm–2 with transistor structures having a 2D AlGaN/GaN channel (AlGaN/GaN HEMTs) is accompanied not only by the generation of point defects, but also by the formation of local regions with a disordered nanomaterial. The degree of disorder of the nanomaterial was evaluated by multifractal analysis methods. An increase in the degree of disorder of the nanomaterial, manifested the most clearly at a proton dose of 2 × 1014 cm–2, leads to several-fold changes in the mobility and electron density in the 2D channel of HEMT structures. In this case, the transistors show a decrease in the source–drain current and an order-of-magnitude increase in the gate leakage current. In HEMT structures having an enhanced disorder of the nanomaterial prior to exposure to protons, proton irradiation results in suppression of the 2D conductivity in the channel and failure of the transistors, even at a dose of 1 × 1014 cm–2. More... »

PAGES

1079-1082

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785016110031

DOI

http://dx.doi.org/10.1134/s1063785016110031

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1033403751


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Other Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Emtsev", 
        "givenName": "V. V.", 
        "id": "sg:person.015361621374.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015361621374.19"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zavarin", 
        "givenName": "E. E.", 
        "id": "sg:person.015451372144.61", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kozlovskii", 
        "givenName": "M. A.", 
        "id": "sg:person.011667273643.43", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011667273643.43"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kudoyarov", 
        "givenName": "M. F.", 
        "id": "sg:person.016305715656.77", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016305715656.77"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lundin", 
        "givenName": "V. V.", 
        "id": "sg:person.013427374503.16", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013427374503.16"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Oganesyan", 
        "givenName": "G. A.", 
        "id": "sg:person.010066675455.68", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010066675455.68"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Petrov", 
        "givenName": "V. N.", 
        "id": "sg:person.014503032311.23", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014503032311.23"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Poloskin", 
        "givenName": "D. S.", 
        "id": "sg:person.014351437511.68", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014351437511.68"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sakharov", 
        "givenName": "A. V.", 
        "id": "sg:person.010201114167.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Troshkov", 
        "givenName": "S. I.", 
        "id": "sg:person.01126063542.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01126063542.10"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shmidt", 
        "givenName": "N. M.", 
        "id": "sg:person.011531160044.65", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011531160044.65"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Svetlana-Elektronpribor Company, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Svetlana-Elektronpribor Company, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "V\u2019yuginov", 
        "givenName": "V. N.", 
        "id": "sg:person.011140026443.99", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011140026443.99"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Svetlana-Elektronpribor Company, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Svetlana-Elektronpribor Company, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zybin", 
        "givenName": "A. A.", 
        "id": "sg:person.012157627770.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012157627770.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Svetlana-Elektronpribor Company, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Svetlana-Elektronpribor Company, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Parnes", 
        "givenName": "Ya. M.", 
        "id": "sg:person.015766160555.17", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015766160555.17"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Bauman Moscow State Technical University, 105005, Moscow, Russia", 
          "id": "http://www.grid.ac/institutes/grid.61569.3d", 
          "name": [
            "Bauman Moscow State Technical University, 105005, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vidyakin", 
        "givenName": "S. I.", 
        "id": "sg:person.013726412633.38", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013726412633.38"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Bauman Moscow State Technical University, 105005, Moscow, Russia", 
          "id": "http://www.grid.ac/institutes/grid.61569.3d", 
          "name": [
            "Bauman Moscow State Technical University, 105005, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gudkov", 
        "givenName": "A. G.", 
        "id": "sg:person.014230041063.03", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014230041063.03"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.502986.0", 
          "name": [
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Chernyakov", 
        "givenName": "A. E.", 
        "id": "sg:person.011630750715.24", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011630750715.24"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.32495.39", 
          "name": [
            "Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kozlovskii", 
        "givenName": "V. V.", 
        "id": "sg:person.015276406077.12", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015276406077.12"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782611010210", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1052571827", 
          "https://doi.org/10.1134/s1063782611010210"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1023/b:rumi.0000018718.85975.91", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032284311", 
          "https://doi.org/10.1023/b:rumi.0000018718.85975.91"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2016-11", 
    "datePublishedReg": "2016-11-01", 
    "description": "It has been shown that the interaction of 1 MeV protons at doses of (0.5\u20132) \u00d7 1014 cm\u20132 with transistor structures having a 2D AlGaN/GaN channel (AlGaN/GaN HEMTs) is accompanied not only by the generation of point defects, but also by the formation of local regions with a disordered nanomaterial. The degree of disorder of the nanomaterial was evaluated by multifractal analysis methods. An increase in the degree of disorder of the nanomaterial, manifested the most clearly at a proton dose of 2 \u00d7 1014 cm\u20132, leads to several-fold changes in the mobility and electron density in the 2D channel of HEMT structures. In this case, the transistors show a decrease in the source\u2013drain current and an order-of-magnitude increase in the gate leakage current. In HEMT structures having an enhanced disorder of the nanomaterial prior to exposure to protons, proton irradiation results in suppression of the 2D conductivity in the channel and failure of the transistors, even at a dose of 1 \u00d7 1014 cm\u20132.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063785016110031", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "11", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "42"
      }
    ], 
    "keywords": [
      "disorders", 
      "dose", 
      "fold change", 
      "doses", 
      "increase", 
      "exposure", 
      "failure", 
      "suppression", 
      "decrease", 
      "defects", 
      "degree", 
      "proton dose", 
      "cases", 
      "changes", 
      "leakage", 
      "irradiation", 
      "specific features", 
      "interaction", 
      "channels", 
      "features", 
      "region", 
      "formation", 
      "method", 
      "generation", 
      "mobility", 
      "proton irradiation", 
      "density", 
      "current", 
      "order", 
      "multifractal analysis method", 
      "structure", 
      "analysis method", 
      "local regions", 
      "degree of disorder", 
      "cm-2", 
      "magnitude increase", 
      "nanomaterials", 
      "protons", 
      "MeV protons", 
      "electron density", 
      "enhanced disorder", 
      "proton interactions", 
      "transistor structure", 
      "AlGaN/GaN channel", 
      "GaN channel", 
      "point defects", 
      "HEMT structures", 
      "transistors", 
      "source-drain current", 
      "gate leakage", 
      "HEMT", 
      "conductivity"
    ], 
    "name": "Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel", 
    "pagination": "1079-1082", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1033403751"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063785016110031"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063785016110031", 
      "https://app.dimensions.ai/details/publication/pub.1033403751"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-11-01T18:26", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_692.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063785016110031"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

249 TRIPLES      22 PREDICATES      80 URIs      70 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063785016110031 schema:about anzsrc-for:02
2 anzsrc-for:0299
3 schema:author N1cda0ad755ab41fb81e61c941649ed39
4 schema:citation sg:pub.10.1023/b:rumi.0000018718.85975.91
5 sg:pub.10.1134/s1063782611010210
6 schema:datePublished 2016-11
7 schema:datePublishedReg 2016-11-01
8 schema:description It has been shown that the interaction of 1 MeV protons at doses of (0.5–2) × 1014 cm–2 with transistor structures having a 2D AlGaN/GaN channel (AlGaN/GaN HEMTs) is accompanied not only by the generation of point defects, but also by the formation of local regions with a disordered nanomaterial. The degree of disorder of the nanomaterial was evaluated by multifractal analysis methods. An increase in the degree of disorder of the nanomaterial, manifested the most clearly at a proton dose of 2 × 1014 cm–2, leads to several-fold changes in the mobility and electron density in the 2D channel of HEMT structures. In this case, the transistors show a decrease in the source–drain current and an order-of-magnitude increase in the gate leakage current. In HEMT structures having an enhanced disorder of the nanomaterial prior to exposure to protons, proton irradiation results in suppression of the 2D conductivity in the channel and failure of the transistors, even at a dose of 1 × 1014 cm–2.
9 schema:genre article
10 schema:inLanguage en
11 schema:isAccessibleForFree false
12 schema:isPartOf N7f58099283ca47f093d2d9ccc3ac6416
13 Nd0139887ddf14d58aabfd154d5dafd9d
14 sg:journal.1136630
15 schema:keywords AlGaN/GaN channel
16 GaN channel
17 HEMT
18 HEMT structures
19 MeV protons
20 analysis method
21 cases
22 changes
23 channels
24 cm-2
25 conductivity
26 current
27 decrease
28 defects
29 degree
30 degree of disorder
31 density
32 disorders
33 dose
34 doses
35 electron density
36 enhanced disorder
37 exposure
38 failure
39 features
40 fold change
41 formation
42 gate leakage
43 generation
44 increase
45 interaction
46 irradiation
47 leakage
48 local regions
49 magnitude increase
50 method
51 mobility
52 multifractal analysis method
53 nanomaterials
54 order
55 point defects
56 proton dose
57 proton interactions
58 proton irradiation
59 protons
60 region
61 source-drain current
62 specific features
63 structure
64 suppression
65 transistor structure
66 transistors
67 schema:name Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
68 schema:pagination 1079-1082
69 schema:productId Ne2ce9f3622de4e578bc6de4347000f8a
70 Nfe1458edd1754c288fabf4748d51a283
71 schema:sameAs https://app.dimensions.ai/details/publication/pub.1033403751
72 https://doi.org/10.1134/s1063785016110031
73 schema:sdDatePublished 2021-11-01T18:26
74 schema:sdLicense https://scigraph.springernature.com/explorer/license/
75 schema:sdPublisher N64259a9f3bf44e549b40dd57f95f7164
76 schema:url https://doi.org/10.1134/s1063785016110031
77 sgo:license sg:explorer/license/
78 sgo:sdDataset articles
79 rdf:type schema:ScholarlyArticle
80 N08c38f7cfc1f461fa8cd716b0a0b24e4 rdf:first sg:person.012157627770.30
81 rdf:rest N4d9beaf39868441db9e21783259fb593
82 N12803311a207470098204bc358291df3 rdf:first sg:person.014351437511.68
83 rdf:rest N1676c8a37e694c869750e73204b68211
84 N1676c8a37e694c869750e73204b68211 rdf:first sg:person.010201114167.20
85 rdf:rest N9b972a0680894d31866aa0d73cabea34
86 N1cda0ad755ab41fb81e61c941649ed39 rdf:first sg:person.015361621374.19
87 rdf:rest N79611cd27c8449e8942f3d7ca1d28464
88 N292292bf4b394358966e09fd240b8a85 rdf:first sg:person.014230041063.03
89 rdf:rest N3d605091458f410199875d92ae604007
90 N2b2f8f81e5c14307a72e24cec35dc535 rdf:first sg:person.011667273643.43
91 rdf:rest N7e6ae26659194f8abe9e617d9704e424
92 N301dcfc9d0ef41b09fa91aae656abc8a rdf:first sg:person.014503032311.23
93 rdf:rest N12803311a207470098204bc358291df3
94 N3d605091458f410199875d92ae604007 rdf:first sg:person.011630750715.24
95 rdf:rest N65d99de64c474259b5df1ea303b4cad4
96 N4d9beaf39868441db9e21783259fb593 rdf:first sg:person.015766160555.17
97 rdf:rest N55c4c0abec44469586bf1e3431195733
98 N55c4c0abec44469586bf1e3431195733 rdf:first sg:person.013726412633.38
99 rdf:rest N292292bf4b394358966e09fd240b8a85
100 N5d445a74723d4c189ad888735503bf11 rdf:first sg:person.010066675455.68
101 rdf:rest N301dcfc9d0ef41b09fa91aae656abc8a
102 N64259a9f3bf44e549b40dd57f95f7164 schema:name Springer Nature - SN SciGraph project
103 rdf:type schema:Organization
104 N65d99de64c474259b5df1ea303b4cad4 rdf:first sg:person.015276406077.12
105 rdf:rest rdf:nil
106 N79611cd27c8449e8942f3d7ca1d28464 rdf:first sg:person.015451372144.61
107 rdf:rest N2b2f8f81e5c14307a72e24cec35dc535
108 N7e6ae26659194f8abe9e617d9704e424 rdf:first sg:person.016305715656.77
109 rdf:rest Ne0705b6d297449ae916f5b0c464bd71e
110 N7f58099283ca47f093d2d9ccc3ac6416 schema:volumeNumber 42
111 rdf:type schema:PublicationVolume
112 N9b972a0680894d31866aa0d73cabea34 rdf:first sg:person.01126063542.10
113 rdf:rest Nee6dbf3b456a4120a426bc6d3db127ae
114 Nc09ff75559b24196a9f8db1b5d0b169b rdf:first sg:person.011140026443.99
115 rdf:rest N08c38f7cfc1f461fa8cd716b0a0b24e4
116 Nd0139887ddf14d58aabfd154d5dafd9d schema:issueNumber 11
117 rdf:type schema:PublicationIssue
118 Ne0705b6d297449ae916f5b0c464bd71e rdf:first sg:person.013427374503.16
119 rdf:rest N5d445a74723d4c189ad888735503bf11
120 Ne2ce9f3622de4e578bc6de4347000f8a schema:name dimensions_id
121 schema:value pub.1033403751
122 rdf:type schema:PropertyValue
123 Nee6dbf3b456a4120a426bc6d3db127ae rdf:first sg:person.011531160044.65
124 rdf:rest Nc09ff75559b24196a9f8db1b5d0b169b
125 Nfe1458edd1754c288fabf4748d51a283 schema:name doi
126 schema:value 10.1134/s1063785016110031
127 rdf:type schema:PropertyValue
128 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
129 schema:name Physical Sciences
130 rdf:type schema:DefinedTerm
131 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
132 schema:name Other Physical Sciences
133 rdf:type schema:DefinedTerm
134 sg:journal.1136630 schema:issn 0320-0116
135 0360-120X
136 schema:name Technical Physics Letters
137 schema:publisher Pleiades Publishing
138 rdf:type schema:Periodical
139 sg:person.010066675455.68 schema:affiliation grid-institutes:grid.423485.c
140 schema:familyName Oganesyan
141 schema:givenName G. A.
142 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010066675455.68
143 rdf:type schema:Person
144 sg:person.010201114167.20 schema:affiliation grid-institutes:grid.423485.c
145 schema:familyName Sakharov
146 schema:givenName A. V.
147 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20
148 rdf:type schema:Person
149 sg:person.011140026443.99 schema:affiliation grid-institutes:None
150 schema:familyName V’yuginov
151 schema:givenName V. N.
152 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011140026443.99
153 rdf:type schema:Person
154 sg:person.01126063542.10 schema:affiliation grid-institutes:grid.423485.c
155 schema:familyName Troshkov
156 schema:givenName S. I.
157 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01126063542.10
158 rdf:type schema:Person
159 sg:person.011531160044.65 schema:affiliation grid-institutes:grid.423485.c
160 schema:familyName Shmidt
161 schema:givenName N. M.
162 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011531160044.65
163 rdf:type schema:Person
164 sg:person.011630750715.24 schema:affiliation grid-institutes:grid.502986.0
165 schema:familyName Chernyakov
166 schema:givenName A. E.
167 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011630750715.24
168 rdf:type schema:Person
169 sg:person.011667273643.43 schema:affiliation grid-institutes:grid.423485.c
170 schema:familyName Kozlovskii
171 schema:givenName M. A.
172 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011667273643.43
173 rdf:type schema:Person
174 sg:person.012157627770.30 schema:affiliation grid-institutes:None
175 schema:familyName Zybin
176 schema:givenName A. A.
177 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012157627770.30
178 rdf:type schema:Person
179 sg:person.013427374503.16 schema:affiliation grid-institutes:grid.423485.c
180 schema:familyName Lundin
181 schema:givenName V. V.
182 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013427374503.16
183 rdf:type schema:Person
184 sg:person.013726412633.38 schema:affiliation grid-institutes:grid.61569.3d
185 schema:familyName Vidyakin
186 schema:givenName S. I.
187 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013726412633.38
188 rdf:type schema:Person
189 sg:person.014230041063.03 schema:affiliation grid-institutes:grid.61569.3d
190 schema:familyName Gudkov
191 schema:givenName A. G.
192 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014230041063.03
193 rdf:type schema:Person
194 sg:person.014351437511.68 schema:affiliation grid-institutes:grid.423485.c
195 schema:familyName Poloskin
196 schema:givenName D. S.
197 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014351437511.68
198 rdf:type schema:Person
199 sg:person.014503032311.23 schema:affiliation grid-institutes:grid.423485.c
200 schema:familyName Petrov
201 schema:givenName V. N.
202 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014503032311.23
203 rdf:type schema:Person
204 sg:person.015276406077.12 schema:affiliation grid-institutes:grid.32495.39
205 schema:familyName Kozlovskii
206 schema:givenName V. V.
207 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015276406077.12
208 rdf:type schema:Person
209 sg:person.015361621374.19 schema:affiliation grid-institutes:grid.423485.c
210 schema:familyName Emtsev
211 schema:givenName V. V.
212 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015361621374.19
213 rdf:type schema:Person
214 sg:person.015451372144.61 schema:affiliation grid-institutes:grid.423485.c
215 schema:familyName Zavarin
216 schema:givenName E. E.
217 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61
218 rdf:type schema:Person
219 sg:person.015766160555.17 schema:affiliation grid-institutes:None
220 schema:familyName Parnes
221 schema:givenName Ya. M.
222 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015766160555.17
223 rdf:type schema:Person
224 sg:person.016305715656.77 schema:affiliation grid-institutes:grid.423485.c
225 schema:familyName Kudoyarov
226 schema:givenName M. F.
227 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016305715656.77
228 rdf:type schema:Person
229 sg:pub.10.1023/b:rumi.0000018718.85975.91 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032284311
230 https://doi.org/10.1023/b:rumi.0000018718.85975.91
231 rdf:type schema:CreativeWork
232 sg:pub.10.1134/s1063782611010210 schema:sameAs https://app.dimensions.ai/details/publication/pub.1052571827
233 https://doi.org/10.1134/s1063782611010210
234 rdf:type schema:CreativeWork
235 grid-institutes:None schema:alternateName Svetlana-Elektronpribor Company, 194021, St. Petersburg, Russia
236 schema:name Svetlana-Elektronpribor Company, 194021, St. Petersburg, Russia
237 rdf:type schema:Organization
238 grid-institutes:grid.32495.39 schema:alternateName Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia
239 schema:name Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia
240 rdf:type schema:Organization
241 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
242 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
243 rdf:type schema:Organization
244 grid-institutes:grid.502986.0 schema:alternateName Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia
245 schema:name Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia
246 rdf:type schema:Organization
247 grid-institutes:grid.61569.3d schema:alternateName Bauman Moscow State Technical University, 105005, Moscow, Russia
248 schema:name Bauman Moscow State Technical University, 105005, Moscow, Russia
249 rdf:type schema:Organization
 




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