The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-07

AUTHORS

V. V. Emtsev, E. E. Zavarin, G. A. Oganesyan, V. N. Petrov, A. V. Sakharov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov

ABSTRACT

The first experimental results demonstrating that the carrier mobility in the AlGaN/GaN 2D channel of transistor structures (AlGaN/GaN-HEMT) is correlated with the manner in which the nanomaterial is organized and also with the operation reliability of transistor parameters are presented. It is shown that improving the nature of organization of the nanomaterials in AlGaN/GaN-HEMT structures, evaluated by the multifractal parameter characterizing the extent to which a nanomaterial is disordered (local symmetry breaking) is accompanied by a significant, several-fold increase in the electron mobility in the 2D channel and in the reliability of parameters of transistors fabricated from these structures. More... »

PAGES

701-703

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785016070075

DOI

http://dx.doi.org/10.1134/s1063785016070075

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1026485410


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