Solar-blind AlxGa1–xN (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-06

AUTHORS

N. V. Kuznetsova, D. V. Nechaev, N. M. Shmidt, S. Yu. Karpov, N. V. Rzheutskii, V. E. Zemlyakov, V. Kh. Kaibyshev, D. Yu. Kazantsev, S. I. Troshkov, V. I. Egorkin, B. Ya. Ber, E. V. Lutsenko, S. V. Ivanov, V. N. Jmerik

ABSTRACT

Polarization-induced p-type doping of AlGaN layers with high aluminum content during plasmaassisted MBE growth has been studied. It is shown that a gradient of the AlN molar fraction in AlGaN (composition gradient) on a level of 0.005 nm–1 must be set in order to obtain a hole concentration of ~1018 cm–3 (measured by the C–V method) in AlxGa1–xN:Mg (x = 0.52–0.32) layers with dopant concentration [Mg] = 1.3 × 1018 cm–3. p–i–n photodiodes based on AlGaN heterostructures with such layers as p-emitters showed maximum photoresponsitivity in the solar-blind wavelength range (λ = 281 nm) about 35 and 48 mA/W at reverse bias voltage U = 0 and–5 V, respectively, and exhibited a dark current density of 3.9 × 10–8 A/cm2 at U =–5 V. More... »

PAGES

635-638

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785016060250

DOI

http://dx.doi.org/10.1134/s1063785016060250

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https://app.dimensions.ai/details/publication/pub.1046435243


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kuznetsova", 
        "givenName": "N. V.", 
        "id": "sg:person.012661525141.38", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012661525141.38"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nechaev", 
        "givenName": "D. V.", 
        "id": "sg:person.012053211625.45", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012053211625.45"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shmidt", 
        "givenName": "N. M.", 
        "id": "sg:person.015647427141.42", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015647427141.42"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Soft-Impact Ltd., 194156, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Soft-Impact Ltd., 194156, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Karpov", 
        "givenName": "S. Yu.", 
        "id": "sg:person.010360535403.74", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010360535403.74"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Physics, National Academy of Sciences of Belarus, 220072, Minsk, Belarus", 
          "id": "http://www.grid.ac/institutes/grid.426545.4", 
          "name": [
            "Institute of Physics, National Academy of Sciences of Belarus, 220072, Minsk, Belarus"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Rzheutskii", 
        "givenName": "N. V.", 
        "id": "sg:person.011334677341.14", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011334677341.14"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Research University MIET (Moscow Institute of Electronic Technology), Zelenograd, 124498, Moscow, Russia", 
          "id": "http://www.grid.ac/institutes/grid.436529.f", 
          "name": [
            "National Research University MIET (Moscow Institute of Electronic Technology), Zelenograd, 124498, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zemlyakov", 
        "givenName": "V. E.", 
        "id": "sg:person.015574213725.02", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015574213725.02"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kaibyshev", 
        "givenName": "V. Kh.", 
        "id": "sg:person.013446152625.16", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013446152625.16"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kazantsev", 
        "givenName": "D. Yu.", 
        "id": "sg:person.014463273123.71", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014463273123.71"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Troshkov", 
        "givenName": "S. I.", 
        "id": "sg:person.01126063542.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01126063542.10"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Research University MIET (Moscow Institute of Electronic Technology), Zelenograd, 124498, Moscow, Russia", 
          "id": "http://www.grid.ac/institutes/grid.436529.f", 
          "name": [
            "National Research University MIET (Moscow Institute of Electronic Technology), Zelenograd, 124498, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Egorkin", 
        "givenName": "V. I.", 
        "id": "sg:person.013613345543.43", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013613345543.43"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ber", 
        "givenName": "B. Ya.", 
        "id": "sg:person.013474671571.59", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Physics, National Academy of Sciences of Belarus, 220072, Minsk, Belarus", 
          "id": "http://www.grid.ac/institutes/grid.426545.4", 
          "name": [
            "Institute of Physics, National Academy of Sciences of Belarus, 220072, Minsk, Belarus"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lutsenko", 
        "givenName": "E. V.", 
        "id": "sg:person.011504617543.23", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011504617543.23"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ivanov", 
        "givenName": "S. V.", 
        "id": "sg:person.011050346465.39", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011050346465.39"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Jmerik", 
        "givenName": "V. N.", 
        "id": "sg:person.010773242043.36", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010773242043.36"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2016-06", 
    "datePublishedReg": "2016-06-01", 
    "description": "Polarization-induced p-type doping of AlGaN layers with high aluminum content during plasmaassisted MBE growth has been studied. It is shown that a gradient of the AlN molar fraction in AlGaN (composition gradient) on a level of 0.005 nm\u20131 must be set in order to obtain a hole concentration of ~1018 cm\u20133 (measured by the C\u2013V method) in AlxGa1\u2013xN:Mg (x = 0.52\u20130.32) layers with dopant concentration [Mg] = 1.3 \u00d7 1018 cm\u20133. p\u2013i\u2013n photodiodes based on AlGaN heterostructures with such layers as p-emitters showed maximum photoresponsitivity in the solar-blind wavelength range (\u03bb = 281 nm) about 35 and 48 mA/W at reverse bias voltage U = 0 and\u20135 V, respectively, and exhibited a dark current density of 3.9 \u00d7 10\u20138 A/cm2 at U =\u20135 V.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063785016060250", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "6", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "42"
      }
    ], 
    "keywords": [
      "polarization-induced p-type doping", 
      "n photodiodes", 
      "mA/W", 
      "dark current density", 
      "p-type doping", 
      "high aluminum content", 
      "p-emitter", 
      "bias voltage U", 
      "AlGaN layer", 
      "AlN molar fraction", 
      "current density", 
      "AlGaN heterostructures", 
      "MBE growth", 
      "voltage U", 
      "such layers", 
      "AlxGa1-xN", 
      "dopant concentration", 
      "aluminum content", 
      "hole concentration", 
      "layer", 
      "photodiodes", 
      "wavelength range", 
      "molar fraction", 
      "photoresponsitivity", 
      "AlGaN", 
      "heterostructures", 
      "doping", 
      "cm2", 
      "emitters", 
      "density", 
      "gradient", 
      "polarization", 
      "range", 
      "concentration", 
      "order", 
      "fraction", 
      "content", 
      "growth", 
      "levels"
    ], 
    "name": "Solar-blind AlxGa1\u2013xN (x > 0.45) p\u2013i\u2013n photodiodes with a polarization-p-doped emitter", 
    "pagination": "635-638", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1046435243"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063785016060250"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063785016060250", 
      "https://app.dimensions.ai/details/publication/pub.1046435243"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:31", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_686.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063785016060250"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

193 TRIPLES      21 PREDICATES      64 URIs      57 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063785016060250 schema:about anzsrc-for:02
2 schema:author Neb0dcb1b4803407288c3111b85345868
3 schema:datePublished 2016-06
4 schema:datePublishedReg 2016-06-01
5 schema:description Polarization-induced p-type doping of AlGaN layers with high aluminum content during plasmaassisted MBE growth has been studied. It is shown that a gradient of the AlN molar fraction in AlGaN (composition gradient) on a level of 0.005 nm–1 must be set in order to obtain a hole concentration of ~1018 cm–3 (measured by the C–V method) in AlxGa1–xN:Mg (x = 0.52–0.32) layers with dopant concentration [Mg] = 1.3 × 1018 cm–3. p–i–n photodiodes based on AlGaN heterostructures with such layers as p-emitters showed maximum photoresponsitivity in the solar-blind wavelength range (λ = 281 nm) about 35 and 48 mA/W at reverse bias voltage U = 0 and–5 V, respectively, and exhibited a dark current density of 3.9 × 10–8 A/cm2 at U =–5 V.
6 schema:genre article
7 schema:inLanguage en
8 schema:isAccessibleForFree false
9 schema:isPartOf N2ed14e72bdd244879a1c6c4caeb8df74
10 N6c407ff4b71040418d14909e2b406fe2
11 sg:journal.1136630
12 schema:keywords AlGaN
13 AlGaN heterostructures
14 AlGaN layer
15 AlN molar fraction
16 AlxGa1-xN
17 MBE growth
18 aluminum content
19 bias voltage U
20 cm2
21 concentration
22 content
23 current density
24 dark current density
25 density
26 dopant concentration
27 doping
28 emitters
29 fraction
30 gradient
31 growth
32 heterostructures
33 high aluminum content
34 hole concentration
35 layer
36 levels
37 mA/W
38 molar fraction
39 n photodiodes
40 order
41 p-emitter
42 p-type doping
43 photodiodes
44 photoresponsitivity
45 polarization
46 polarization-induced p-type doping
47 range
48 such layers
49 voltage U
50 wavelength range
51 schema:name Solar-blind AlxGa1–xN (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter
52 schema:pagination 635-638
53 schema:productId N675e6ad079e74aa0b44c3297b2e6ab34
54 N937dc5417bb54620ab03c80a1204e037
55 schema:sameAs https://app.dimensions.ai/details/publication/pub.1046435243
56 https://doi.org/10.1134/s1063785016060250
57 schema:sdDatePublished 2022-05-20T07:31
58 schema:sdLicense https://scigraph.springernature.com/explorer/license/
59 schema:sdPublisher Ne05f6efc55a440e6937d3ef129c537f8
60 schema:url https://doi.org/10.1134/s1063785016060250
61 sgo:license sg:explorer/license/
62 sgo:sdDataset articles
63 rdf:type schema:ScholarlyArticle
64 N2ed14e72bdd244879a1c6c4caeb8df74 schema:volumeNumber 42
65 rdf:type schema:PublicationVolume
66 N3eb6e69fbb1f4592bb411a1b998cabc5 rdf:first sg:person.013446152625.16
67 rdf:rest N756f4d6f809e46f9a0a5a0b8bc83a9ef
68 N503c3486bf2b42af962a9029ad50c351 rdf:first sg:person.015574213725.02
69 rdf:rest N3eb6e69fbb1f4592bb411a1b998cabc5
70 N5289fdae010d4678beb221f70a893f7b rdf:first sg:person.010360535403.74
71 rdf:rest Nb3d171902b7f4588a9ebf17c0644515f
72 N5525edad19314143ad6c5b979e772e00 rdf:first sg:person.013613345543.43
73 rdf:rest N56c293df0c194db6b12fd71501a7f741
74 N56c293df0c194db6b12fd71501a7f741 rdf:first sg:person.013474671571.59
75 rdf:rest Nfcba185aeb6d4ee99bb000129066dfa1
76 N60a11a94f7b8459f8f28cb426bc33eb5 rdf:first sg:person.015647427141.42
77 rdf:rest N5289fdae010d4678beb221f70a893f7b
78 N675e6ad079e74aa0b44c3297b2e6ab34 schema:name dimensions_id
79 schema:value pub.1046435243
80 rdf:type schema:PropertyValue
81 N6c407ff4b71040418d14909e2b406fe2 schema:issueNumber 6
82 rdf:type schema:PublicationIssue
83 N6c43aca98d30433cad6b4fe0e973ffcb rdf:first sg:person.012053211625.45
84 rdf:rest N60a11a94f7b8459f8f28cb426bc33eb5
85 N756f4d6f809e46f9a0a5a0b8bc83a9ef rdf:first sg:person.014463273123.71
86 rdf:rest N95c1358fc2e44b50a8d5aca8c79d7b8a
87 N937dc5417bb54620ab03c80a1204e037 schema:name doi
88 schema:value 10.1134/s1063785016060250
89 rdf:type schema:PropertyValue
90 N95c1358fc2e44b50a8d5aca8c79d7b8a rdf:first sg:person.01126063542.10
91 rdf:rest N5525edad19314143ad6c5b979e772e00
92 Nb3d171902b7f4588a9ebf17c0644515f rdf:first sg:person.011334677341.14
93 rdf:rest N503c3486bf2b42af962a9029ad50c351
94 Nbcbd740ae41248a89bbb4c8899cf855b rdf:first sg:person.011050346465.39
95 rdf:rest Nd629b4bbd0cd4bac98fb8f872b6dfbab
96 Nd629b4bbd0cd4bac98fb8f872b6dfbab rdf:first sg:person.010773242043.36
97 rdf:rest rdf:nil
98 Ne05f6efc55a440e6937d3ef129c537f8 schema:name Springer Nature - SN SciGraph project
99 rdf:type schema:Organization
100 Neb0dcb1b4803407288c3111b85345868 rdf:first sg:person.012661525141.38
101 rdf:rest N6c43aca98d30433cad6b4fe0e973ffcb
102 Nfcba185aeb6d4ee99bb000129066dfa1 rdf:first sg:person.011504617543.23
103 rdf:rest Nbcbd740ae41248a89bbb4c8899cf855b
104 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
105 schema:name Physical Sciences
106 rdf:type schema:DefinedTerm
107 sg:journal.1136630 schema:issn 0320-0116
108 0360-120X
109 schema:name Technical Physics Letters
110 schema:publisher Pleiades Publishing
111 rdf:type schema:Periodical
112 sg:person.010360535403.74 schema:affiliation grid-institutes:None
113 schema:familyName Karpov
114 schema:givenName S. Yu.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010360535403.74
116 rdf:type schema:Person
117 sg:person.010773242043.36 schema:affiliation grid-institutes:grid.423485.c
118 schema:familyName Jmerik
119 schema:givenName V. N.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010773242043.36
121 rdf:type schema:Person
122 sg:person.011050346465.39 schema:affiliation grid-institutes:grid.423485.c
123 schema:familyName Ivanov
124 schema:givenName S. V.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011050346465.39
126 rdf:type schema:Person
127 sg:person.01126063542.10 schema:affiliation grid-institutes:grid.423485.c
128 schema:familyName Troshkov
129 schema:givenName S. I.
130 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01126063542.10
131 rdf:type schema:Person
132 sg:person.011334677341.14 schema:affiliation grid-institutes:grid.426545.4
133 schema:familyName Rzheutskii
134 schema:givenName N. V.
135 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011334677341.14
136 rdf:type schema:Person
137 sg:person.011504617543.23 schema:affiliation grid-institutes:grid.426545.4
138 schema:familyName Lutsenko
139 schema:givenName E. V.
140 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011504617543.23
141 rdf:type schema:Person
142 sg:person.012053211625.45 schema:affiliation grid-institutes:grid.423485.c
143 schema:familyName Nechaev
144 schema:givenName D. V.
145 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012053211625.45
146 rdf:type schema:Person
147 sg:person.012661525141.38 schema:affiliation grid-institutes:grid.423485.c
148 schema:familyName Kuznetsova
149 schema:givenName N. V.
150 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012661525141.38
151 rdf:type schema:Person
152 sg:person.013446152625.16 schema:affiliation grid-institutes:grid.423485.c
153 schema:familyName Kaibyshev
154 schema:givenName V. Kh.
155 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013446152625.16
156 rdf:type schema:Person
157 sg:person.013474671571.59 schema:affiliation grid-institutes:grid.423485.c
158 schema:familyName Ber
159 schema:givenName B. Ya.
160 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59
161 rdf:type schema:Person
162 sg:person.013613345543.43 schema:affiliation grid-institutes:grid.436529.f
163 schema:familyName Egorkin
164 schema:givenName V. I.
165 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013613345543.43
166 rdf:type schema:Person
167 sg:person.014463273123.71 schema:affiliation grid-institutes:grid.423485.c
168 schema:familyName Kazantsev
169 schema:givenName D. Yu.
170 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014463273123.71
171 rdf:type schema:Person
172 sg:person.015574213725.02 schema:affiliation grid-institutes:grid.436529.f
173 schema:familyName Zemlyakov
174 schema:givenName V. E.
175 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015574213725.02
176 rdf:type schema:Person
177 sg:person.015647427141.42 schema:affiliation grid-institutes:grid.423485.c
178 schema:familyName Shmidt
179 schema:givenName N. M.
180 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015647427141.42
181 rdf:type schema:Person
182 grid-institutes:None schema:alternateName Soft-Impact Ltd., 194156, St. Petersburg, Russia
183 schema:name Soft-Impact Ltd., 194156, St. Petersburg, Russia
184 rdf:type schema:Organization
185 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
186 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
187 rdf:type schema:Organization
188 grid-institutes:grid.426545.4 schema:alternateName Institute of Physics, National Academy of Sciences of Belarus, 220072, Minsk, Belarus
189 schema:name Institute of Physics, National Academy of Sciences of Belarus, 220072, Minsk, Belarus
190 rdf:type schema:Organization
191 grid-institutes:grid.436529.f schema:alternateName National Research University MIET (Moscow Institute of Electronic Technology), Zelenograd, 124498, Moscow, Russia
192 schema:name National Research University MIET (Moscow Institute of Electronic Technology), Zelenograd, 124498, Moscow, Russia
193 rdf:type schema:Organization
 




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