Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-05

AUTHORS

W. V. Lundin, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, A. V. Sakharov, M. A. Sinitsyn, B. Ya. Ber, D. Yu. Kazantsev, A. F. Tsatsulnikov

ABSTRACT

The influence of propane present in a reactor at various stages of GaN growth by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates on the character of epitaxial process and the properties of epilayers has been studied. Doped GaN epilayers with carbon concentration 5 × 1018 cm–3 characterized by high crystalline perfection, an atomically smooth surface, and electric breakdown voltage above 500 V at a doped layer thickness of 4 μm have been obtained. More... »

PAGES

539-542

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378501605028x

DOI

http://dx.doi.org/10.1134/s106378501605028x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006988474


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