Ontology type: schema:ScholarlyArticle
2016-04
AUTHORSV. V. Ratnikov, D. V. Nechaev, V. N. Jmerik, S. V. Ivanov
ABSTRACTThe structure of AlN/c-sapphire templates obtained by plasma-activated molecular beam epitaxy (PAMBE) has been studied by X-ray diffractometry techniques. The results show the advantages of using coarse-grained AlN nucleation layers prepared by high-temperature (780°C) adatom-migration-enhanced epitaxy. Using 3.5-nm-thick GaN inserts (obtained by three-dimensional growth under N-rich conditions), it is possible to obtain templates with insignificant residual macrostresses and relatively narrow widths (FWHM) of 0002 and 10\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\bar 1$$\end{document}5 diffraction reflections. More... »
PAGES419-422
http://scigraph.springernature.com/pub.10.1134/s1063785016040234
DOIhttp://dx.doi.org/10.1134/s1063785016040234
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