.
.
"range" .
"Ivanov" .
.
_:N04308af260fb476c92019f5a75208bc1 .
"Technical Physics Letters" .
"plasma" .
"Atomic, Molecular, Nuclear, Particle and Plasma Physics" .
_:Ndd28693716a3446e9ff406f1904c805e "pub.1019669254" .
.
"theory" .
"Physical Sciences" .
"1063-7850" .
"article" .
"Rodin" .
_:Naac0ccaedbc246a09a3fcfcbad831e95 _:N881876d85a344d89ad0533a71e2c2a87 .
"types" .
"order" .
.
"P. B." .
"breakdown voltage" .
"characteristics" .
"P. A." .
"43-46" .
.
.
"shaper" .
.
"main characteristics" .
"avalanche switching" .
.
.
"dependence" .
_:N662f526a01884058ae7a51d4d628d8cb "42" .
.
"switching" .
_:Ndd28693716a3446e9ff406f1904c805e "dimensions_id" .
"magnitude" .
_:N662f526a01884058ae7a51d4d628d8cb .
"2016-01-01" .
"analytical theory" .
.
"parameters" .
.
"2016-01" .
"I. V." .
.
.
_:Na1980797c9a8448ea03889e8a4b5dece .
"state" .
.
.
.
"calculations" .
_:N881876d85a344d89ad0533a71e2c2a87 .
_:N2c49050353d6456992cf82b0d568638b "doi" .
_:N5c9c4d9dcb0c42a987bbde353801fdd0 .
"structure" .
"electric field" .
"2022-10-01T06:42" .
_:N2c49050353d6456992cf82b0d568638b "10.1134/s1063785016010090" .
"waves" .
.
.
"coefficient" .
"articles" .
_:Ndd28693716a3446e9ff406f1904c805e .
"impact ionization coefficients" .
"Parameters of ultrafast avalanche switching of high-voltage diode structures based on 4H-SiC have been estimated theoretically. The calculation was carried out using the analytical theory of the impact ionization wave of the TRAPATT type, which makes it possible to determine the main characteristics of a wave for arbitrary dependences of the impact ionization coefficients and carrier drift velocity on electric field. It is shown that, for a high-voltage (1\u201310 kV) 4H-SiC structure, the time of switching from the blocking to the conducting state is ~10 ps, which is an order of magnitude shorter than that for a Si structure with the same stationary breakdown voltage, and the concentration of the electron-hole plasma created by the wave is two orders of magnitude higher. Picosecond switching times can be reached for 4H-SiC structures with a stationary breakdown voltage exceeding 10 kV." .
"ionization waves" .
"Ivanov" .
"Parameters of silicon carbide diode avalanche shapers for the picosecond range" .
"time" .
.
"concentration" .
_:Na1980797c9a8448ea03889e8a4b5dece "Springer Nature - SN SciGraph project" .
.
_:N66e2018b82544dd0a05f88e49876bff3 .
_:Ndd28693716a3446e9ff406f1904c805e .
.
.
_:N2c49050353d6456992cf82b0d568638b .
_:Na1980797c9a8448ea03889e8a4b5dece .
"diode structure" .
.
.
.
_:N881876d85a344d89ad0533a71e2c2a87 _:N66e2018b82544dd0a05f88e49876bff3 .
"voltage" .
"field" .
"orders of magnitude" .
"electron-hole plasma" .
.
.
_:N2c49050353d6456992cf82b0d568638b .
"M. S." .
"carrier drift velocity" .
"picosecond range" .
_:N662f526a01884058ae7a51d4d628d8cb .
_:Naac0ccaedbc246a09a3fcfcbad831e95 .
.
.
.
.
"picoseconds" .
"Grekhov" .
"https://doi.org/10.1134/s1063785016010090" .
"Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia" .
.
"arbitrary dependence" .
.
.