Fabrication of quasi-superlattices at the interface between 3C-SiC epitaxial layer and substrates of hexagonal SiC polytypes by sublimation epitaxy in ... View Full Text


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Article Info

DATE

2015-12

AUTHORS

A. A. Lebedev, S. Yu. Davydov, L. M. Sorokin, L. V. Shakhov

ABSTRACT

Transmission electron microscopy has been used to study the structure of a transition layer between a hexagonal substrate (6H-SiC and 4H-SiC) and a cubic silicon carbide layer grown by sublimation epitaxy in vacuum. It is shown by microdiffraction analysis that the transition layer with a thickness of 210 nm is constituted by alternating layers of cubic (3C) and hexagonal (6H) silicon carbide. It is demonstrated that 6H-SiC/3C-SiC and 4H-SiC/3C-SiC quasi-superlattices can be produced by this method. More... »

PAGES

1156-1158

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378501512010x

DOI

http://dx.doi.org/10.1134/s106378501512010x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1022851270


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