On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in p-4H-SiC View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-12

AUTHORS

A. A. Lebedev, B. Ya. Ber, E. V. Bogdanova, N. V. Seredova, D. Yu. Kazantsev, V. V. Kozlovski

ABSTRACT

Photoluminescence (PL) appearing in p-4H-SiC upon its electron irradiation has been studied. A model that accounts for the dependence of the PL intensity on the irradiation dose is suggested. The conclusion is drawn that nitrogen–radiation defect donor–acceptor pairs are PL activators.

PAGES

1143-1145

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785015120093

DOI

http://dx.doi.org/10.1134/s1063785015120093

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1028278227


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