The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-10

AUTHORS

W. V. Lundin, E. E. Zavarin, M. G. Popov, S. I. Troshkov, A. V. Sakharov, I. P. Smirnova, M. M. Kulagina, V. Yu. Davydov, A. N. Smirnov, A. F. Tsatsulnikov

ABSTRACT

Heavily Si-doped AlxGa1–xN mesastrip structures were grown by selective MOVPE technology. AlxGa1–xN:Si mesastructures with x ~ 0.01–0.07 possess a smoother top and more even side surfaces as compared to those in analogous GaN:Si structures. During the growth of mesastructures with x ~ 0.03–0.07, a thin nanocrystalline AlN deposit appears on the Si3N4 mask. This deposit is not formed during the growth of structures with sufficiently low aluminum content. More... »

PAGES

1006-1009

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785015100247

DOI

http://dx.doi.org/10.1134/s1063785015100247

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1017328232


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