Execution of energy efficient detection of hydrogen using Pt/WOx/SiC semiconductor structure View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-09

AUTHORS

V. V. Zuev, M. V. Demin, V. Yu. Fominskii, R. I. Romanov, V. V. Grigor’ev, V. N. Nevolin

ABSTRACT

It has been shown that, at elevated temperatures (∼350°C), the most distinct response to H2 from the thin film structure Pt/WOx/SiC is achieved at registration of change in voltage for the reverse branch of a current-voltage characteristic. Comparative studies of electric current conduction through the structure and over its surface (with deposited Pt film) have led to the conclusion that a change in properties of the Pt/WOx and WOx/SiC interfaces under action of H2 mostly determines efficiency of response of the structure in the case of “transverse” measuring geometry. In the case of a 2% concentration of H2 in air the voltage shift for the reverse branch at a current of ∼10 μA reached 5 V against 2 V on the forward branch and “planar” geometry of measurements. More... »

PAGES

824-827

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785015090138

DOI

http://dx.doi.org/10.1134/s1063785015090138

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049123284


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