Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-04

AUTHORS

V. I. Brylevskii, A. V. Rozhkov, I. A. Smirnova, P. B. Rodin, I. V. Grekhov

ABSTRACT

A qualitative difference between high-voltage gallium-arsenide diodes and similar silicon devices is found experimentally upon ultrafast switching in the delayed avalanche breakdown regime. It is shown that, following switching, a gallium-arsenide diode remains in a highly conductive state throughout the entire duration of the applied voltage pulse and the recovery of the reverse voltage across the p-n junction due to the dispersal of nonequilibrium electron-hole plasma is not observed. In the same interval of time (2 ns in our experiment), a silicon diode passes completely into a blocking state. The residual voltage amplitude for a gallium-arsenide diode is an order of magnitude lower than that for a silicon device. The discovered effect is similar to a known effect of “sticking” of gallium-arsenide diode switches (the lock-on effect), which are triggered by a laser pulse, in a conductive state. More... »

PAGES

307-309

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785015040045

DOI

http://dx.doi.org/10.1134/s1063785015040045

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1004697689


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0202", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Atomic, Molecular, Nuclear, Particle and Plasma Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Brylevskii", 
        "givenName": "V. I.", 
        "id": "sg:person.07532222023.47", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07532222023.47"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Rozhkov", 
        "givenName": "A. V.", 
        "id": "sg:person.011722543423.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011722543423.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Smirnova", 
        "givenName": "I. A.", 
        "id": "sg:person.010507650052.89", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010507650052.89"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Rodin", 
        "givenName": "P. B.", 
        "id": "sg:person.07451233274.36", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07451233274.36"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Grekhov", 
        "givenName": "I. V.", 
        "id": "sg:person.016601261017.57", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016601261017.57"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063785014040166", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006971237", 
          "https://doi.org/10.1134/s1063785014040166"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2015-04", 
    "datePublishedReg": "2015-04-01", 
    "description": "A qualitative difference between high-voltage gallium-arsenide diodes and similar silicon devices is found experimentally upon ultrafast switching in the delayed avalanche breakdown regime. It is shown that, following switching, a gallium-arsenide diode remains in a highly conductive state throughout the entire duration of the applied voltage pulse and the recovery of the reverse voltage across the p-n junction due to the dispersal of nonequilibrium electron-hole plasma is not observed. In the same interval of time (2 ns in our experiment), a silicon diode passes completely into a blocking state. The residual voltage amplitude for a gallium-arsenide diode is an order of magnitude lower than that for a silicon device. The discovered effect is similar to a known effect of \u201csticking\u201d of gallium-arsenide diode switches (the lock-on effect), which are triggered by a laser pulse, in a conductive state.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063785015040045", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136630", 
        "issn": [
          "0320-0116", 
          "0360-120X"
        ], 
        "name": "Technical Physics Letters", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "41"
      }
    ], 
    "keywords": [
      "nonequilibrium electron-hole plasma", 
      "gallium arsenide diodes", 
      "electron-hole plasma", 
      "similar silicon devices", 
      "silicon devices", 
      "conductive state", 
      "laser pulses", 
      "ultrafast switching", 
      "breakdown regime", 
      "voltage pulses", 
      "avalanche switching", 
      "n junction", 
      "silicon diodes", 
      "orders of magnitude", 
      "diodes", 
      "anomalous dynamics", 
      "pulses", 
      "reverse voltage", 
      "avalanche breakdown regime", 
      "voltage amplitude", 
      "switching", 
      "devices", 
      "state", 
      "voltage", 
      "plasma", 
      "regime", 
      "amplitude", 
      "dynamics", 
      "qualitative differences", 
      "magnitude", 
      "residual voltage", 
      "junction", 
      "switch", 
      "diode switches", 
      "entire duration", 
      "effect", 
      "order", 
      "time", 
      "interval", 
      "duration", 
      "same interval", 
      "differences", 
      "dispersal", 
      "recovery"
    ], 
    "name": "Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching", 
    "pagination": "307-309", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1004697689"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063785015040045"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063785015040045", 
      "https://app.dimensions.ai/details/publication/pub.1004697689"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-08-04T17:03", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220804/entities/gbq_results/article/article_657.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063785015040045"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063785015040045'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063785015040045'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063785015040045'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063785015040045'


 

This table displays all metadata directly associated to this object as RDF triples.

133 TRIPLES      21 PREDICATES      70 URIs      61 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063785015040045 schema:about anzsrc-for:02
2 anzsrc-for:0202
3 schema:author Ndc9fed28668a4ab1860a89d01eee120e
4 schema:citation sg:pub.10.1134/s1063785014040166
5 schema:datePublished 2015-04
6 schema:datePublishedReg 2015-04-01
7 schema:description A qualitative difference between high-voltage gallium-arsenide diodes and similar silicon devices is found experimentally upon ultrafast switching in the delayed avalanche breakdown regime. It is shown that, following switching, a gallium-arsenide diode remains in a highly conductive state throughout the entire duration of the applied voltage pulse and the recovery of the reverse voltage across the p-n junction due to the dispersal of nonequilibrium electron-hole plasma is not observed. In the same interval of time (2 ns in our experiment), a silicon diode passes completely into a blocking state. The residual voltage amplitude for a gallium-arsenide diode is an order of magnitude lower than that for a silicon device. The discovered effect is similar to a known effect of “sticking” of gallium-arsenide diode switches (the lock-on effect), which are triggered by a laser pulse, in a conductive state.
8 schema:genre article
9 schema:isAccessibleForFree false
10 schema:isPartOf N7db06417707e4c3c86b743cdcd70097f
11 Nadcb935949214e8796c248e5264cfccd
12 sg:journal.1136630
13 schema:keywords amplitude
14 anomalous dynamics
15 avalanche breakdown regime
16 avalanche switching
17 breakdown regime
18 conductive state
19 devices
20 differences
21 diode switches
22 diodes
23 dispersal
24 duration
25 dynamics
26 effect
27 electron-hole plasma
28 entire duration
29 gallium arsenide diodes
30 interval
31 junction
32 laser pulses
33 magnitude
34 n junction
35 nonequilibrium electron-hole plasma
36 order
37 orders of magnitude
38 plasma
39 pulses
40 qualitative differences
41 recovery
42 regime
43 residual voltage
44 reverse voltage
45 same interval
46 silicon devices
47 silicon diodes
48 similar silicon devices
49 state
50 switch
51 switching
52 time
53 ultrafast switching
54 voltage
55 voltage amplitude
56 voltage pulses
57 schema:name Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching
58 schema:pagination 307-309
59 schema:productId N080332d255d24848885f0f40b064b4a2
60 Na4c2d4ca7b95482da60224183937d305
61 schema:sameAs https://app.dimensions.ai/details/publication/pub.1004697689
62 https://doi.org/10.1134/s1063785015040045
63 schema:sdDatePublished 2022-08-04T17:03
64 schema:sdLicense https://scigraph.springernature.com/explorer/license/
65 schema:sdPublisher N874e8916ed4249e2989318e0d13bcc6c
66 schema:url https://doi.org/10.1134/s1063785015040045
67 sgo:license sg:explorer/license/
68 sgo:sdDataset articles
69 rdf:type schema:ScholarlyArticle
70 N080332d255d24848885f0f40b064b4a2 schema:name dimensions_id
71 schema:value pub.1004697689
72 rdf:type schema:PropertyValue
73 N2c7d025be4214880b882f9b049908c0b rdf:first sg:person.010507650052.89
74 rdf:rest N7f38c3e8217641aebc4f451d25521bc5
75 N7db06417707e4c3c86b743cdcd70097f schema:volumeNumber 41
76 rdf:type schema:PublicationVolume
77 N7f38c3e8217641aebc4f451d25521bc5 rdf:first sg:person.07451233274.36
78 rdf:rest Nc808b9c9f254412d92e804be9bf920a1
79 N874e8916ed4249e2989318e0d13bcc6c schema:name Springer Nature - SN SciGraph project
80 rdf:type schema:Organization
81 Na4c2d4ca7b95482da60224183937d305 schema:name doi
82 schema:value 10.1134/s1063785015040045
83 rdf:type schema:PropertyValue
84 Naa6d60151a614b358d2421a691fa7af8 rdf:first sg:person.011722543423.29
85 rdf:rest N2c7d025be4214880b882f9b049908c0b
86 Nadcb935949214e8796c248e5264cfccd schema:issueNumber 4
87 rdf:type schema:PublicationIssue
88 Nc808b9c9f254412d92e804be9bf920a1 rdf:first sg:person.016601261017.57
89 rdf:rest rdf:nil
90 Ndc9fed28668a4ab1860a89d01eee120e rdf:first sg:person.07532222023.47
91 rdf:rest Naa6d60151a614b358d2421a691fa7af8
92 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
93 schema:name Physical Sciences
94 rdf:type schema:DefinedTerm
95 anzsrc-for:0202 schema:inDefinedTermSet anzsrc-for:
96 schema:name Atomic, Molecular, Nuclear, Particle and Plasma Physics
97 rdf:type schema:DefinedTerm
98 sg:journal.1136630 schema:issn 0320-0116
99 0360-120X
100 schema:name Technical Physics Letters
101 schema:publisher Pleiades Publishing
102 rdf:type schema:Periodical
103 sg:person.010507650052.89 schema:affiliation grid-institutes:grid.423485.c
104 schema:familyName Smirnova
105 schema:givenName I. A.
106 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010507650052.89
107 rdf:type schema:Person
108 sg:person.011722543423.29 schema:affiliation grid-institutes:grid.423485.c
109 schema:familyName Rozhkov
110 schema:givenName A. V.
111 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011722543423.29
112 rdf:type schema:Person
113 sg:person.016601261017.57 schema:affiliation grid-institutes:grid.423485.c
114 schema:familyName Grekhov
115 schema:givenName I. V.
116 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016601261017.57
117 rdf:type schema:Person
118 sg:person.07451233274.36 schema:affiliation grid-institutes:grid.423485.c
119 schema:familyName Rodin
120 schema:givenName P. B.
121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07451233274.36
122 rdf:type schema:Person
123 sg:person.07532222023.47 schema:affiliation grid-institutes:grid.423485.c
124 schema:familyName Brylevskii
125 schema:givenName V. I.
126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07532222023.47
127 rdf:type schema:Person
128 sg:pub.10.1134/s1063785014040166 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006971237
129 https://doi.org/10.1134/s1063785014040166
130 rdf:type schema:CreativeWork
131 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
132 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
133 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...