Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching View Full Text


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Article Info

DATE

2015-04

AUTHORS

V. I. Brylevskii, A. V. Rozhkov, I. A. Smirnova, P. B. Rodin, I. V. Grekhov

ABSTRACT

A qualitative difference between high-voltage gallium-arsenide diodes and similar silicon devices is found experimentally upon ultrafast switching in the delayed avalanche breakdown regime. It is shown that, following switching, a gallium-arsenide diode remains in a highly conductive state throughout the entire duration of the applied voltage pulse and the recovery of the reverse voltage across the p-n junction due to the dispersal of nonequilibrium electron-hole plasma is not observed. In the same interval of time (2 ns in our experiment), a silicon diode passes completely into a blocking state. The residual voltage amplitude for a gallium-arsenide diode is an order of magnitude lower than that for a silicon device. The discovered effect is similar to a known effect of “sticking” of gallium-arsenide diode switches (the lock-on effect), which are triggered by a laser pulse, in a conductive state. More... »

PAGES

307-309

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785015040045

DOI

http://dx.doi.org/10.1134/s1063785015040045

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1004697689


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