MOVPE of III-N LED structures with short technological process View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-03

AUTHORS

W. V. Lundin, D. V. Davydov, E. E. Zavarin, M. G. Popov, A. V. Sakharov, E. V. Yakovlev, D. S. Bazarevskii, R. A. Talalaev, A. F. Tsatsulnikov, M. N. Mizerov, V. M. Ustinov

ABSTRACT

The paper presents results on optimizing the MOVPE technology of light-emitting diode (LED) structures in a Dragon-125 system to accelerate the technological cycle. Due to the high growth rate of GaN layers and optimization of the initial GaN growth phase, the total duration of the epitaxial process is reduced from 4 h 45 min to 2 h 44 min. The LED diode structures grown by this technique compare well in quality with LEDs grown by the standard method in the commercially available AIX2000HT system. More... »

PAGES

213-216

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785015030116

DOI

http://dx.doi.org/10.1134/s1063785015030116

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1002237782


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