Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p+-n photodiode structure formation View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-08-31

AUTHORS

K. D. Mynbaev, N. L. Bazhenov, M. V. Yakushev, D. V. Marin, V. S. Varavin, Yu. G. Sidorov, S. A. Dvoretsky

ABSTRACT

The impurity-defect structure of heteroepitaxial CdxHg1 − xTe/Si (0.35 < x < 0.39) layers grown by molecular beam epitaxy for the creation of arsenic-ion-implanted p+-n junctions has been studied by the photoluminescence method. It is established that full realization of the possibilities of p+-on-n photodiode structures based on the CdHgTe/Si system is hindered by uncontrolled doping of the material that leads to the formation of both shallow (impurity level energy ∼10 meV) and deep (∼50 meV) acceptor levels. More... »

PAGES

708-711

Journal

TITLE

Technical Physics Letters

ISSUE

8

VOLUME

40

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785014080239

DOI

http://dx.doi.org/10.1134/s1063785014080239

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1003176247


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