Irradiation of sublimation-grown p-SiC with 0.9-MeV electrons View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-08-31

AUTHORS

A. A. Lebedev, V. V. Kozlovski

ABSTRACT

Carrier removal rate Vd has been determined in three sublimation-grown p-type SiC polytypes under irradiation with 0.9-MeV electrons. Known published data are used to compare the values of Vd in silicon carbide at room temperature in relation to the polytype, conductivity type, and fabrication technology. A model that accounts for the difference between the values of Vd is suggested. More... »

PAGES

651-652

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063785014080094

DOI

http://dx.doi.org/10.1134/s1063785014080094

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1043331023


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